Semiconductor Device and Manufacturing Method of the Same

ABSTRACT

With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

TECHNICAL FIELD

The present invention relates to a semiconductor device and amanufacturing method thereof.

BACKGROUND ART

In semiconductor devices which transmit and receive data throughantennas by wireless communication (such semiconductor devices are alsoreferred to as non-contact signal processing devices, semiconductorintegrated circuit chips, and IC chips), a breakdown (electrostaticbreakdown) of the semiconductor devices due to electrostatic discharge(ESD) from the outside is a major problem which may cause reduction inreliability or productivity from the time of manufacturing steps andinspection of the semiconductor devices to the time of using them asproducts, and countermeasures for the problem has been reported (e.g.,see Patent Document 1).

Patent Document 1 discloses an example in which electrostatic breakdownis prevented by using a conductive polymer layer for a substrate and anadhesive agent in the above-described semiconductor devices.

[Reference] [Patent Document 1] Japanese Published Patent ApplicationNo. 2007-241999 DISCLOSURE OF INVENTION

As the market for the above-described semiconductor devices expands,forms and necessary characteristics of the semiconductor devicesdemanded become diverse. In specific, reduction in size and thickness isstrongly demanded as a demand for the form. At the same time, furtherincrease in resistance to the above-described electrostatic breakdownand improvement in strength against an external stress are demanded.Further, it is important to secure, as well as the improvement in thereliability, a function of wireless communication which is a primaryfunction more certainly than conventional semiconductor devices.

In view of the foregoing problem, an object according to one embodimentof the present invention is to provide a semiconductor device whoseresistance to electrostatic breakdown is increased or strength for anexternal stress is improved without failure of a function of wirelesscommunication while reduction in the size and the thickness is achieved.Further, another object is to manufacture a semiconductor device withhigh yield by preventing a defect in shape and functional operation dueto electrostatic breakdown in a manufacturing process. Furthermore,another object is to manufacture a semiconductor device with highproductivity at low cost.

A semiconductor device which is one embodiment of the present inventionincludes a semiconductor integrated circuit, an antenna electricallyconnected to the semiconductor integrated circuit, a first insulatinglayer (an insulating layer is also referred to as an insulator) providedover the antenna, a conductive shield provided over the first insulatinglayer, and a second insulating layer and a third insulating layer whichsandwich the top and the bottom of the semiconductor integrated circuit,the antenna, the first insulating layer, and the conductive shield. Thesecond insulating layer and the third insulating layer are firmly stuckto each other at the end portions of the semiconductor device. Theperiphery of the semiconductor integrated circuit, the antenna, and thefirst insulating layer is covered with the second insulating layer andthe third insulating layer. The semiconductor device which is oneembodiment of the present invention is a non-contact signal processingdevice which has a function of transmitting and receiving a signalto/from an external device by wireless communication. Accordingly, theconductive shield shields the semiconductor integrated circuit in thesemiconductor device from application of static electricity from theoutside without interrupting electromagnetic waves which should betransmitted and received through the antenna electrically connected tothe semiconductor integrated circuit.

A semiconductor device which is one embodiment of the present inventionincludes a semiconductor integrated circuit, an antenna electricallyconnected to the semiconductor integrated circuit, a conductive film(also referred to as a conductive shield) provided so as to overlap withthe semiconductor integrated circuit with a first insulator providedtherebetween, and a second insulator provided so as to sandwich thesemiconductor integrated circuit, the antenna, and the conductive film,and to cover the top and bottom and the periphery thereof.

At that time, the second insulator may have a structural body in which afibrous body is impregnated with a resin.

The conductive film contains metal, metal oxide, semiconductor, or metalnitride.

As the metal film, for example, a titanium film with a thickness ofgreater than or equal to 5 nm and less than or equal to 100 nm may beused. As the metal oxide film, for example, an indium tin oxide filmwith a thickness of greater than or equal to 5 nm and less than or equalto 100 nm containing silicon oxide may be used.

Alternatively, as the conductive film, a structural body having astructure in which island-shaped conductors need using metal, metaloxide, semiconductor, or metal nitride are scattered may be used.

The thickness of at least one of the first insulator and the secondinsulator is preferably greater than or equal to 5 inn and less than orequal to 50 μm

The conductive shield diffuses static electricity applied byelectrostatic discharge to let it go or prevents local electric charges(localization of electric charges) (prevents local potential differencein the semiconductor device) so that an electrostatic breakdown of thesemiconductor integrated circuit can be prevented. The conductive shieldis formed so as to cover the top side or the bottom side of thesemiconductor integrated circuit with an insulator providedtherebetween. Alternatively, the conductive shield is formed so as tocover the semiconductor integrated circuit with the insulator providedtherebetween. It is preferable that the conductive shield beelectrically isolated from the semiconductor integrated circuit (alsoreferred to as a floating state).

Such a conductive shield limits attenuation of electromagnetic waves,which should be transmitted and received through an antenna electricallyconnected to the semiconductor integrated circuit the conductive shieldcovers, to the minimum and blocks static electricity. Accordingly, asemiconductor device which has resistance to electrostatic breakdownwithout failure of a function of wireless communication can be provided.

Insulators provided so as to sandwich the top and bottom of thesemiconductor integrated circuit also function as impact resistancelayers against a physical force applied from the outside (such a forceis also referred to as an external stress) or impact diffusion layersfor diffusing the force. Since a local force applied on thesemiconductor device can be reduced by the insulators, failure offunctional operation or damage to the semiconductor device due to anexternal stress can be prevented.

The semiconductor integrated circuit included in the semiconductordevice can be formed by the following manner: the semiconductorintegrated circuit is fowled over a substrate; one surface of thesemiconductor integrated circuit is bonded to an insulator; and thesemiconductor integrated circuit is separated from the substrate. Inthat case, a surface which is exposed on the semiconductor integratedcircuit and the substrate by the separation of the semiconductorintegrated circuit from the substrate is referred to as a separationsurface.

Alternatively, the semiconductor integrated circuit included in thesemiconductor device may be directly formed over a flexible substrate.As the flexible substrate, a thin film resin substrate such as a PETfilm and a PEN film can be given. However, it is needless to say thatthe flexible substrate is not limited to them.

Further, in this specification, the term “transfer” (also referred to astranspose) indicates to separate a semiconductor integrated circuitformed over a substrate from the substrate and move the semiconductorintegrated circuit to another substrate. In other words, the term“transfer” indicates to move a position where the semiconductorintegrated circuit is provided to another substrate.

The insulator may be bonded to the semiconductor integrated circuit withthe use of a bonding layer. In that case, the bonding layer is betweenthe semiconductor integrated circuit and the insulator. Alternatively,the insulator and the semiconductor integrated circuit may be directlybonded to each other by heating and pressure treatment.

For the conductive shield, a film of metal, metal nitride, metal oxide,or the like, or a stack of any of the films can be used. The thicknessof the conductive shield is preferably less than or equal to 1 μm inconsideration of balance between the above-described function ofwireless communication and capability of shielding static electricity.

The conductive shield may be formed using an element such as titanium,molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum,palladium, iridium, rhodium, tantalum, cadmium, zinc, iron, silicon,germanium, zirconium, or barium; or an alloy material, a compoundmaterial, a nitride material, an oxide material, or the like, whichcontains any of the above elements as a main component.

As the nitride material, tantalum nitride, titanium nitride, or the likecan be used.

As the oxide material, indium tin oxide (ITO), indium tin oxidecontaining silicon oxide (ITSO), organoindium, organotin, zinc oxide, orthe like can be used. Alternatively, indium zinc oxide (IZO) containingzinc oxide (ZnO), zinc oxide containing gallium (Ga), tin oxide, indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxide (ITO)containing titanium oxide, or the like may be used.

Alternatively, a semiconductor film having conductivity, which isobtained by adding an impurity element or the like to a semiconductor,or the like can be used. For example, a polycrystalline silicon filmdoped with an impurity element such as phosphorus can be used.

Further, as the conductive shield, a conductive macromolecule (alsoreferred to as a conductive polymer) may be used. As the conductivemacromolecule, a so-called π-electron conjugated conductive polymer canbe used. For example, polyaniline and/or a derivative thereof,polypyrrole and/or a derivative thereof, polythiophene and/or aderivative thereof, and a copolymer of two or more kinds of thosematerials can be given.

Specific examples of a conjugated conductive polymer are given below:polypyrrole, poly(3-methylpyrrole), poly(3-butylpyrrole),poly(3-octylpyrrole), poly(3-decylpyrrole), poly(3,4-dimethylpyrrole),poly(3,4-dibutylpyrrole), poly(3-hydroxypyrrole),poly(3-methyl-4-hydroxypyrrole), poly(3-methoxypyrrole),poly(3-ethoxypyrrole), poly(3-octoxypyrrole), poly(3-carboxylpyrrole),poly(3-methyl-4-carboxylpyrrole), polyN-methylpyrrole, polythiophene,poly(3-methylthiophene), poly(3-butylthiophene), poly(3-octylthiophene),poly(3-decylthiophene), poly(3-dodecylthiophene),poly(3-methoxythiophene), poly(3-ethoxythiophene),poly(3-octoxythiophene), poly(3-carboxylthiophene),poly(3-methyl-4-carboxylthiophene), poly(3,4-ethylenedioxythiophene),polyaniline, poly(2-methylaniline), poly(2-octylaniline),poly(2-isobutylaniline), poly(3-isobutylaniline), poly(2-anilinesulfonicacid), or poly(3-anilinesulfonic acid).

An organic resin or a dopant (a halogen, a Lewis acid, an inorganicacid, an organic acid, a transition metal halide, an organic cyanocompound, a nonionic surfactant, and the like) may be contained in theconductive shield containing a conductive macromolecule.

The conductive shield can be formed by a dry process such as asputtering method, a plasma CVD method, or an evaporation method, or awet process such as a coating method, a printing method, or a dropletdischarge method (inkjet method).

For the insulator, a structural body in which a fibrous body isimpregnated with an organic resin can be used, for example.

Alternatively, for the insulator, a material with a low elasticity and ahigh breaking strength may be used.

As described above, since a property of impact resistance against aphysical force applied to the semiconductor device from the outside(such a force is also referred to as an external stress) or a propertyof impact diffusion for diffusing the force is demanded as a mainfunction of the insulator, the insulator is preferably formed using ahigh-strength material. As typical examples of a high-strength material,a polyvinyl alcohol resin, a polyester resin, a polyamide resin, apolyethylene resin, an aramid resin, a polyparaphenylene benzobisoxazoleresin, a glass resin, and the like can be given. By provision of theinsulator formed using a high-strength material having elasticity, aload such as local pressing force is diffused through and absorbed inthe whole layer, so that damage of the semiconductor device can beprevented.

In specific, as the insulator, an aramid resin, a polyethylenenaphthalate (PEN) resin, a polyether sulfone (PES) resin, apolyphenylene sulfide (PPS) resin, a polyimide (PI) resin, or the likecan be used.

More preferably, the semiconductor integrated circuit is sandwichedbetween the above-described structural bodies in which the fibrous bodyis impregnated with the organic resin and is further sandwiched betweenthe above-described insulators formed using the resin.

Note that in the present invention, “semiconductor device” indicatesgeneral devices which can function using semiconductor properties. Adevice that has a circuit including a semiconductor element (such as atransistor, a memory element, or a diode), and a semiconductor devicesuch as a chip having a processor circuit can be manufactured as oneembodiment of the present invention.

With the use of a conductive shield covering a semiconductor integratedcircuit, an electrostatic breakdown (malfunctions of the circuit ordamages to a semiconductor element) of the semiconductor integratedcircuit due to electrostatic discharge is prevented. Further, with theuse of the insulators which sandwich the semiconductor integratedcircuit, a highly reliable semiconductor device that is reduced inthickness and size and has resistance to an external stress can beprovided. A reason for selectively providing the conductive shield onthe antenna side is that electrostatic discharge tends to occurespecially in the antenna because the antenna is formed using aconductor with a large surface area. By providing the conductive shieldnot on the bottom side of the semiconductor integrated circuit but onthe antenna side, electrostatic discharge can be prevented moreefficiently. Further, as compared to a structure in which the conductiveshield is provided so as to cover the semiconductor integrated circuitand the antenna from the both sides, adverse effect on communicationcapability can be limited to the minimum.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are diagrams each illustrating a semiconductor devicewhich is one embodiment of the present invention.

FIGS. 2A to 2C are diagrams each illustrating a semiconductor devicewhich is one embodiment of the present invention.

FIGS. 3A to 3D are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 4A and 4B are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 5A and 5B are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 6A to 6E are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 7A to 7C are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 8A and 8B are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIG. 9 is a diagram illustrating a structure of a semiconductor devicewhich is one embodiment of the present invention.

FIG. 10 is a diagram illustrating a structure of a semiconductor devicewhich is one embodiment of the present invention.

FIGS. 11A to 11C are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 12A and 12B are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIGS. 13A to 13C are diagrams each illustrating an application exampleof a semiconductor device which is one embodiment of the presentinvention.

FIGS. 14A to 14G are diagrams each illustrating an application exampleof a semiconductor device which is one embodiment of the presentinvention.

FIGS. 15A to 15D are diagrams illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

FIG. 16 is a diagram illustrating a manufacturing method of asemiconductor device which is one embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described with reference tothe accompanying drawings. However, the present invention is not limitedto the following description, and it is to be easily understood by thoseskilled in the art that various changes for the modes and detailsthereof are possible unless such changes depart from the spirit andscope of the invention. Therefore, the present invention should not beinterpreted as being limited to what is described in the embodimentsdescribed below. Note that in the structures of the present inventiondescribed below, identical portions or portions having similar functionsare marked by same reference numerals throughout the drawings so as toeliminate repeated explanation.

Embodiment 1

In this embodiment, a semiconductor integrated circuit will be describedby exemplifying a semiconductor integrated circuit which is separatedfrom a substrate over which the semiconductor integrated circuit hasbeen formed, and sandwiched between flexible insulators. Note that inthis specification, the substrate over which the semiconductorintegrated circuit has been formed is also referred to as a formationsubstrate. Thus, the semiconductor integrated circuit is formed over theformation substrate with a separation layer provided therebetween.However, as described above, a case where the semiconductor integratedcircuit is directly formed over the flexible substrate without aseparation step and the like is also possible.

FIGS. 1A and 1B illustrate a semiconductor device of this embodiment. Asshown in FIG. 1A, the semiconductor device which is one embodiment ofthe present invention has a structure in which a conductive shield 103is provided over a structural body including a semiconductor integratedcircuit 100, an antenna 101 electrically connected to the semiconductorintegrated circuit 100, and an insulator 102 provided over the antenna101. Further, the outside of the structure is sandwiched betweeninsulators 104 a and 104 b and between insulators 105 a and 105 b.Although FIGS. 1A and 1B show a stack of insulators 104 a and 105 a anda stack of insulators 104 b and 105 b as the insulators which interposethe outside of the structure, this embodiment is not limited to thisstructure. A single layer or a stack of three or more layers may beemployed.

The insulators 104 a and 105 a and the insulators 104 b and 105 b areprovided on the bottom of the semiconductor integrated circuit 100 andover the top of the semiconductor integrated circuit 100, respectively,so as to cover the side surfaces of the semiconductor integrated circuit100 and be in contact with each other at end portions. In order to formsuch a structure, the structure may be formed in the following manner:after the semiconductor integrated circuit 100 and the antenna 101 areseparated into chip forms, the insulators 104 a and 104 b and theinsulators 105 a and 105 b sandwich the semiconductor integrated circuit100 and the antenna 101 in a chip form so as to cover the top and bottomsurfaces and side surfaces thereof as shown in FIG. 1A; or theinsulators 104 a and 105 a and insulators 104 b and 105 b are formed onthe bottom of and over the top of the semiconductor integrated circuit100 and the antenna 101, respectively, in advance, and laser or the likeis used for separating the semiconductor integrated circuit 100 and theantenna 101 into chip forms so that the side surfaces thereof arecovered with the insulators 104 a and 104 b and the insulators 105 a and105 b, which are melted and fused together due to heat at the time ofthe separation, at end portions 150 as shown in FIG. 1B.

Although the insulators 104 a and 104 b and the insulators 105 a and 105b are uniformly formed so as to cover the top side, the bottom side, andthe side surfaces of the semiconductor integrated circuit in FIG. 1A,the insulators 104 a and 104 b and the insulators 105 a and 105 b may beformed in stages depending on a step: an insulator may be formed overthe entire surface at one time or may be formed over a top side, abottom side, and side surfaces separately.

Note that although a bonding surface between the insulators 104 a and104 b and a bonding surface between the insulators 105 a and 105 b areshown by solid lines in FIGS. 1A and 1B for convenience, distinct bordersurfaces do not actually exist in the case where the same material isused for the insulators.

The semiconductor device in this embodiment is a non-contact signalprocessing device which has a function of transmitting and receiving asignal to/from an external device by wireless communication.Accordingly, the conductive shield 103 shields the semiconductorintegrated circuit 100 in the semiconductor device from application ofstatic electricity from the outside without interrupting electromagneticwaves which should be transmitted and received to/from the antenna 101included in the semiconductor device. The conductive shield 103 diffusesstatic electricity applied by electrostatic discharge to let it go orprevents local electric charges (localization of electric charges)(prevents local potential difference) so that an electrostatic breakdownof the semiconductor integrated circuit 100 can be prevented.

In addition, the conductive shield 103 is provided only on the top sideof the semiconductor integrated circuit 100 and the antenna 101. Sincethe antenna 101 is formed using a conductor with a large surface area,electrostatic discharge especially tends to occur. By providing theconductive shield 103 on the antenna 101 side, electrostatic dischargecan be prevented more efficiently. Further, since the conductive shield103 is not provided on a surface on the bottom side of the semiconductorintegrated circuit 100, a fine communication function can be securedwhile adverse effect on transmission and reception of data is limited tothe minimum and an electrostatic breakdown is prevented as describedabove.

In addition, the semiconductor device shown in this embodiment operatesby generating an induced electromotive force by electromagnetic wavesfrom the outside (has a wireless function). Accordingly, the conductiveshield 103 needs to be formed using a conductive material which preventsa breakdown of the semiconductor integrated circuit 100 due to staticelectricity and passes electromagnetic waves.

In general, it is known that electromagnetic waves attenuate in asubstance. The attenuation of the electromagnetic waves is prominentespecially in a conductive material. Thus, in this embodiment, since theconductive shield 103 may have a thickness which is adequate to easilydiffuse static electricity, the thickness of the conductive shield 103may be adequately reduced so as to limit the attenuation of theelectromagnetic waves to the minimum.

The thickness of the conductive shield 103 may be determined on thebasis of the frequency of an electromagnetic wave used forcommunication, or the resistivity or the magnetic permeability of aconductive material used.

For example, when the frequency of the electromagnetic wave is set to13.56 MHz and titanium (resistivity ρ: 5.5×10⁻⁷ (Ω·m)) is used for theconductive shield 103, the thickness of the conductive shield 103 is setto at least approximately less than or equal to 100 nm. Accordingly, abreakdown of the semiconductor device due to electrostatic discharge canbe suppressed while communication with the outside can be fine.

It is needless to say that a material used for the conductive shield 103is not limited to titanium. For example, in the case where indium tinoxide containing silicon oxide (also referred to as ITSO), which hashigher resistivity than titanium, is used, the conductive shield 103 maybe formed to have a thickness of at least approximately less than orequal to 700 nm.

In addition, the lower limit of the thickness of the conductive shieldis preferably determined on the basis of resistivity. For example, whenthe resistivity of a conductive material used for the conductive shieldis high, the conductive shield is preferably formed to be thick in orderto efficiently diffuse static electricity. If the conductive shield isformed to be too thin using a conductive material with a highresistivity, static electricity cannot be efficiently diffused whenelectrostatic discharge occurs, whereby there is a possibility of abreakdown of the semiconductor integrated circuit.

Accordingly, in order to efficiently prevent a breakdown of thesemiconductor device due to static electricity, the thickness of theconductive shield is preferably determined so as to make the sheetresistance less than or equal to 1.0×10⁷ ohm/square, more preferablyless than or equal to 1.0×10⁴ ohm/square, further preferably less thanor equal to 1.0×10² ohm/square.

Note that if the sheet resistance of a film for forming the conductiveshield 103 is within the above-described range, the film is preferablyas thin as possible in order to pass electromagnetic waves.

Note that in the case where titanium or the like having a lowresistivity is used as a conductive material, the thickness of theconductive shield 103 may be more than or equal to 5 nm (preferably morethan or equal to 10 nm) in consideration of a manufacturing process andthe like, even though efficient diffusion of static electricity andsuppression of attenuation of an electromagnetic wave can be achievedwith a small thickness.

On the other hand, in the case where a compound of silicon oxide andindium tin oxide, which has a comparatively high resistivity, or thelike, is used, the thickness of the conductive shield 103 is preferablyat least more than or equal to 5 nm, more preferably more than or equalto 5 nm and less than or equal to 100 nm.

By forming the above-described conductive shield 103, it is possible toobtain a semiconductor device in which a breakdown due to electrostaticdischarge is efficiently suppressed and communication with the outsidecan be fine.

Next, a material and the like which can be applied to the structureshown in FIGS. 1A and 1B will be described in detail.

The conductive shield 103 has a structure in which attenuation of anelectromagnetic wave which should be transmitted and received to/fromthe antenna 101 is limited to the minimum and static electricity isblocked. Accordingly, a highly reliable semiconductor device that hasresistance to an electrostatic breakdown and can transmit and receivedata through an antenna by wireless communication can be provided.

For the conductive shield 103, a film of metal, metal nitride, metaloxide, or the like, or a stack of any of the films can be used. Theconductive shield 103 may be formed using, for example, an elementselected from titanium, molybdenum, tungsten, aluminum, copper, silver,gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium,zinc, iron, silicon, germanium, zirconium, or barium; or an alloymaterial, a compound material, a nitride material, or an oxide materialeach containing any of the above elements as a main component.

As the nitride material, tantalum nitride, titanium nitride, or the likecan be used.

As the oxide material, indium tin oxide (ITO), indium tin oxidecontaining silicon oxide (ITSO), organoindium, organotin, zinc oxide, orthe like can be used. Further, indium zinc oxide (IZO) containing zincoxide (ZnO), zinc oxide containing gallium (Ga), tin oxide, indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, indium tin oxide containingtitanium oxide, or the like may also be used.

Alternatively, a semiconductor film having conductivity, which isobtained by adding an impurity element or the like to a semiconductor,or the like can be used. For example, a polycrystalline silicon filmdoped with an impurity element such as phosphorus can be used.

Further, as the conductive shield 103, a conductive macromolecule (alsoreferred to as a conductive polymer) may be used. As the conductivemacromolecule, a so-called π-electron conjugated conductive polymer canbe used. For example, polyaniline and/or a derivative thereof,polypyrrole and/or a derivative thereof, polythiophene and/or aderivative thereof, and a copolymer of two or more kinds of thosematerials can be given.

Specific examples of a conjugated conductive polymer are given below:polypyrrole, poly(3-methylpyrrole), poly(3-butylpyrrole),poly(3-octylpyrrole), poly(3-decylpyrrole), poly(3,4-dimethylpyrrole),poly(3,4-dibutylpyrrole), poly(3-hydroxypyrrole),poly(3-methyl-4-hydroxypyrrole), poly(3-methoxypyrrole),poly(3-ethoxypyrrole), poly(3-octoxypyrrole), poly(3-carboxylpyrrole),poly(3-methyl-4-carboxylpyrrole), polyN-methylpyrrole, polythiophene,poly(3-methylthiophene), poly(3-butylthiophene), poly(3-octylthiophene),poly(3-decylthiophene), poly(3-dodecylthiophene),poly(3-methoxythiophene), poly(3-ethoxythiophene),poly(3-octoxythiophene), poly(3-carboxylthiophene),poly(3-methyl-4-carboxylthiophene), poly(3,4-ethylenedioxythiophene),polyaniline, poly(2-methylaniline), poly(2-octylaniline),poly(2-isobutylaniline), poly(3-isobutylaniline), poly(2-anilinesulfonicacid), or poly(3-anilinesulfonic acid).

An organic resin or a dopant (a halogen, a Lewis acid, an inorganicacid, an organic acid, a transition metal halide, an organic cyanocompound, a nonionic surfactant, and the like) may be contained in theconductive shield 103 formed using a material containing a conductivemacromolecule.

The conductive shield 103 can be formed by a dry process such as asputtering method, a plasma CVD method, or an evaporation method, or awet process such as a coating method, a printing method, or a dropletdischarge method (inkjet method).

As insulators which sandwich the semiconductor integrated circuit 100and the antenna 101, a structural body in which a fibrous body isimpregnated with an organic resin can be used. FIGS. 2A to 2C show anexample of using a structural body in which a fibrous body isimpregnated with an organic resin for the insulators 104 a and 104 b.FIGS. 2A and 2B correspond to FIGS. 1A and 1B.

In FIGS. 2A and 2B, as insulators corresponding to the above-describedinsulators 104 a and 104 b, a structural body in which a fibrous body201 a is impregnated with an organic resin 202 a and a structural bodyin which a fibrous body 201 b is impregnated with an organic resin 202 bare used.

FIG. 2C shows an example of a plan view of a structural body in which afibrous body is impregnated with an organic resin. As illustrated in thestructure in FIG. 2C, the fibrous body 201 is woven using warp yarnsspaced at regular intervals and weft yarns spaced at regular intervals.Such a fibrous body which is woven using the warp yarns and the weftyarns has regions without the warp yarns and the weft yarns, that is, aspace portion. In the fibrous body 201, a percentage of space portionsimpregnated with the organic resin 202 is increased, so thatadhesiveness between the fibrous body 201 and the semiconductorintegrated circuit 100 and the antenna 101 can be strengthened.

Alternatively, in the fibrous body 201, the density of the warp yarnsand the weft yarns may be high and a percentage of the space portion maybe low. A structural body in which a fibrous body is impregnated with anorganic resin is also referred to as a prepreg. The prepreg is astructural body having flexibility in which local depression is reduced.The prepreg is specifically formed in a following manner: after afibrous body is impregnated with a matrix resin which is diluted with anorganic solvent, drying is performed so that the organic solvent isvolatilized and the matrix resin is semi-cured. The thickness of thestructural body is preferably greater than or equal to 10 μm and lessthan or equal to 100 μm, preferably greater than or equal to 10 μm andless than or equal to 30 μm. By using a structural body with such athickness, a thin semiconductor device capable of being curved can bemanufactured. As the structural body in which the fibrous body isimpregnated with the organic resin, a prepreg having an elasticity ofmore than or equal to 13 GPa and less than or equal to 15 GPa and amodulus of rupture of approximately 140 MPa can be used.

Note that although the structural body in which the fibrous body isimpregnated with the organic resin is a single layer in FIGS. 2A and 2B,a stack of a plurality of layers may be used. In that case, thestructural body may be a stack of a plurality of structure bodies ineach of which a single layer fibrous body is impregnated with an organicresin or may be a structural body in which a stack of a plurality offibrous bodies is impregnated with an organic resin. Further, instacking a plurality of structure bodies in each of which a single layerfibrous body is impregnated with an organic resin, another layer may besandwiched between the structural bodies.

A thermosetting resin such as an epoxy resin, an unsaturated polyesterresin, a polyimide resin, a bismaleimide-triazine resin, or a cyanateresin can be used for the organic resin 202. Alternatively, athermoplastic resin such as a polyphenylene oxide resin, apolyetherimide resin, or a fluorine resin can be used for the organicresin 202. Further alternatively, a plurality of resins selected fromthe above-described thermosetting resin and thermoplastic resin may beused as the organic resin 202. By using the above organic resin, thefibrous body can be bonded to the semiconductor integrated circuit byheat treatment. Note that the higher the glass transition temperature ofthe organic resin 202 is, the less the organic resin 202 is damaged bylocal pressing force, which is preferable.

Highly thermally-conductive filler may be dispersed in the organic resin202 or the yarn bundle of the fibrous body. As the highlythermally-conductive filler, aluminum nitride, boron nitride, siliconnitride, alumina, or the like can be given. As the highlythermally-conductive filler, a metal particle such as silver or coppercan also be given. When the highly thermally-conductive filler isincluded in the organic resin or yarn bundles of fibers, heat generatedin the semiconductor integrated circuit can be easily released to theoutside. Accordingly, thermal storage in the semiconductor device can besuppressed, and a breakdown of the semiconductor device can be reduced.

The fibrous body 201 is a woven or nonwoven fabric using high-strengthfibers of an organic compound or an inorganic compound and provided soas to partly overlap with each other. A high-strength fiber isspecifically a fiber with a high tensile modulus of elasticity or afiber with a high Young's modulus. As typical examples of ahigh-strength fiber, a polyvinyl alcohol fiber, a polyester fiber, apolyamide fiber, a polyethylene fiber, an aramid fiber, apolyparaphenylene benzobisoxazole fiber, a glass fiber, a carbon fiber,and the like can be given. As the glass fiber, a glass fiber using Eglass, S glass, D glass, Q glass, and the like can be given. It is to benoted that the fibrous body 201 may be formed from one kind of theabove-described high-strength fibers or a plurality of theabove-described high-strength fibers.

Further, the fibrous body 201 is formed of a bundle of fibers (singleyarn) (such a bundle is hereinafter referred to as a yarn bundle).Although FIG. 2C shows a woven fabric woven by using the fibrous body201 formed of a yarn bundle as a warp yarn and a weft yarn, an unwovenfabric in which a plural kinds of a yarn bundles of fibers are stackedrandomly or in one direction can also be employed. In the case of awoven fabric, a plain-woven fabric, a twilled fabric, a satin-wovenfabric, or the like can be used as appropriate.

The yarn bundle may have a circular shape or an elliptical shape incross section. As the yarn bundle of fibers, a yarn bundle of fiberswhich has been subjected to fiber opening with a high-pressure waterstream, high-frequency vibration using liquid as a medium, continuousultrasonic vibration, pressing with a roller, or the like may be used.The yarn bundle of fibers which is subjected to fabric opening has alarge width, has a smaller number of single yarns in the thicknessdirection, and has an elliptical shape or a flat shape in its crosssection. Further, by using a loosely twisted yarn as the yarn bundle offibers, the yarn bundle is easily flattened and has an elliptical shapeor a flat shape in cross section. Using a yarn bundle having anelliptical shape or a flat shape in cross section in this manner canreduce the thickness of the fibrous body 201. Accordingly, the thicknessof the structural body can be reduced and thus a thin semiconductordevice can be manufactured.

Note that in the drawings described in this embodiment, the fibrousbodies 201, 201 a, and 201 b are shown as a woven fabric which isplain-woven using a yarn bundle having an elliptical shape in crosssection.

Further, in order to enhance the permeability of an organic resin intothe inside of a yarn bundle of fibers, the fiber may be subjected tosurface treatment. For example, as the surface treatment, coronadischarge, plasma discharge, or the like for activating a surface of thefiber can be given. Further, surface treatment using a silane couplingagent or a titanate coupling agent can be given.

Alternatively, for the insulators 104 a and 104 b, a material with a lowelasticity and a high breaking strength may be used. For example, a filmhaving a rubber-like elasticity with an elasticity of more than or equalto 5 GPa and less than or equal to 12 GPa and a modulus of rupture ofmore than or equal to 300 MPa can be used.

The insulators 104 a and 104 b are preferably formed using ahigh-strength material. As typical examples of a high-strength material,a polyvinyl alcohol resin, a polyester resin, a polyamide resin, apolyethylene resin, an aramid resin, a polyparaphenylene benzobisoxazoleresin, a glass resin, and the like can be given. By providing theinsulators 104 a and 104 b formed using a high-strength material havingelasticity, a load such as local pressure is diffused to and absorbed inthe entire layer, so that the semiconductor device can be prevented frombeing damaged.

More specifically, for the insulators 104 a and 104 b, an aramid resin,a polyethylene naphthalate (PEN) resin, a polyethersulfone (PES) resin,a polyphenylene sulfide (PPS) resin, a polyimide resin (PI), or the likemay be used.

In order to bond the semiconductor integrated circuit 100 and theantenna 101 to the insulators 104 a and 104 b, a bonding layer may beused. The bonding layer is acceptable as long as it can bond theinsulators 104 a and 104 b and the semiconductor integrated circuit 100and the antenna 101. The bonding layer can be formed using athermosetting resin, an ultraviolet curable resin, an acrylic resin, anurethane resin, an epoxy resin, a silicone resin, or the like. Thethickness of the bonding layer may be approximately more than or equalto 3 μm and less than or equal to 15 μm. In the case where thesemiconductor integrated circuit 100 and the antenna 101 are bonded tothe insulators 104 a and 104 b by heat and pressure treatment, thebonding layer is not necessarily used.

Subsequently, a method for manufacturing a semiconductor device which isone embodiment of the present invention is described with reference toFIGS. 3A to 3D.

A semiconductor integrated circuit 300, an antenna 301, an insulator302, and a conductive shield 303 are formed over a substrate 310, whichis a formation substrate and has an insulating surface, with aseparation layer 311 provided therebetween (see FIG. 3A).

As the substrate 310 which is a formation substrate, a glass substrate,a quartz substrate, a sapphire substrate, a ceramic substrate, a metalsubstrate having an insulating layer on its surface, or the like can beused. Alternatively, a plastic substrate which can withstand the processtemperature of this embodiment may be used. In the manufacturing processof a semiconductor device, a formation substrate can be selected asappropriate in accordance with the process.

The separation layer 311 is formed by a sputtering method, a plasma CVDmethod, a coating method, a printing method, or the like, so as to haveeither a single layer structure or a layered structure by using anelement selected from tungsten (W), molybdenum (Mo), titanium (Ti),tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr),zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),iridium (Ir), and silicon (Si); an alloy material containing such anelement as a main component; or a compound material containing suchelements as a main component. The crystalline structure of a layercontaining silicon may be any one of an amorphous state, amicrocrystalline state, or a polycrystalline state. Note that thecoating method includes a spin-coating method, a droplet dischargemethod, and a dispensing method in its category here.

When the separation layer 311 has a single layer structure, a tungstenlayer, a molybdenum layer, or a layer containing a mixture of tungstenand molybdenum is preferably formed. Alternatively, a layer containingthe oxide or oxynitride of tungsten, a layer containing the oxide oroxynitride of molybdenum, or a layer containing the oxide or oxynitrideof mixture of tungsten and molybdenum is formed. Note that the mixtureof tungsten and molybdenum corresponds to an alloy of tungsten andmolybdenum, for example.

If the separation layer 311 has a layered structure, it is preferablethat a tungsten layer, a molybdenum layer, or a layer containing amixture of tungsten and molybdenum be formed as the first layer, and alayer containing an oxide, a nitride, an oxynitride, or a nitride oxideof tungsten, molybdenum, or a mixture of tungsten and molybdenum beformed as the second layer.

If a layered structure of a layer containing tungsten and a layercontaining tungsten oxide is formed as the separation layer 311, thelayer containing tungsten is formed, and an insulating layer formed fromoxide is formed thereover, and a layer containing tungsten oxide in aninterface between the tungsten layer and the insulating layer is formed,which may be utilized. Furthermore, a tungsten oxide layer may be formedby performing thermal oxidation treatment, oxygen plasma treatment,treatment with a solution having strong oxidation power such as ozonewater, or the like to the surface of the layer containing tungsten.Further, plasma treatment or heat treatment may be performed in anatmosphere of oxygen, nitrogen, or dinitrogen monoxide, or a mixed gasof these gases and another gas. This similarly applies to the case wherelayers containing nitride, oxynitride, and nitride oxide of tungsten areformed, and after forming a layer containing tungsten, a silicon nitridelayer, a silicon oxynitride layer, and a silicon nitride oxide layer maybe formed thereover.

In the foregoing process, the separation layer 311 is formed so as to bein contact with the substrate 310. However, a base insulating layer maybe formed so as to be in contact with the substrate 310, and theseparation layer 311 may be formed so as to be in contact with theinsulating layer.

In this embodiment, a titanium film with a thickness of 10 nm (more than0 μm and less than or equal to 1 μm, preferably more than or equal to 5nm and less than or equal to 100 nm) is formed by a sputtering method asthe conductive shield 303.

After that, a first insulator 304 b is bonded over the conductive shield303 and then, the semiconductor integrated circuit 300, the antenna 301,the insulator 302, and the conductive shield 303 are separated from thesubstrate 310 by using the separation layer 311 as a border. At thattime, the semiconductor integrated circuit 300, the antenna 301, theinsulator 302, and the conductive shield 303 are provided on the firstinsulator 304 b side (see FIG. 3B).

In this embodiment, a structural body in which a fibrous body 320 b isimpregnated with an organic resin 321 b is used as the first insulator304 b. A structural body is heated and subjected to pressure bonding sothat the organic resin of the structural body is plasticized or cured.In the case where the organic resin is an organic plastic resin, theorganic resin which is plasticized is then cured by cooling to roomtemperature. By heating and pressure bonding, the organic resin isuniformly spread so as to be in close contact with a semiconductorintegrated circuit and is cured. A step in which the structural body issubjected to pressure bonding is performed under an atmospheric pressureor a reduced pressure.

Note that a transfer step in which the semiconductor integrated circuitis transferred to another substrate can be performed by using, asappropriate, the following method: a method in which a separation layeris foamed between a substrate and a semiconductor integrated circuit, ametal oxide film is provided between the separation layer and thesemiconductor integrated circuit, and the metal oxide film is weakenedby crystallization, thereby separating the semiconductor integratedcircuit; a method in which an amorphous silicon film containing hydrogenis provided between a substrate having high heat resistance and asemiconductor integrated circuit, and the amorphous silicon film isirradiated with a laser beam or etched to remove the amorphous siliconfilm, thereby separating the semiconductor integrated circuit; a methodin which a separation layer is formed between a substrate and asemiconductor integrated circuit, a metal oxide film is provided betweenthe separation layer and the semiconductor integrated circuit, the metaloxide film is weakened by crystallization, part of the separation layeris etched away using a solution or a halogen fluoride gas such as NF₃,BrF₃, or ClF₃, and separation is performed at the weakened metal oxidefilm; a method in which a substrate over which a semiconductorintegrated circuit is formed is mechanically removed or is etched awayusing a solution or a halogen fluoride gas such as NF₃, BrF₃, or ClF₃;or the like. Alternatively, it is also possible to use a method in whicha film containing nitrogen, oxygen, hydrogen, or the like (e.g., anamorphous silicon film containing hydrogen, an alloy film containinghydrogen, or an alloy film containing oxygen) is used as a separationlayer, and the separation layer is irradiated with a laser beam so thatnitrogen, oxygen, or hydrogen contained in the separation layer isemitted as a gas, thereby promoting separation between a semiconductorintegrated circuit and a substrate.

By combining the above-described separation methods, the transferringstep can be more easily performed. That is, separation can be conductedwith physical force (e.g., by a machine or the like) after making iteasier for the separation layer and the semiconductor element layer tobe separated from each other by conducting laser beam irradiation,etching the separation layer with a gas or a solution, and/ormechanically removing the separation layer using a keen knife orscalpel.

Alternatively, the semiconductor integrated circuit may be separatedfrom the formation substrate by providing liquid at an interface betweenthe separation layer and the semiconductor integrated circuit.

The structural body is heated and bonded by pressure to an exposedseparation surface of the semiconductor integrated circuit 300 to bond asecond insulator 304 a. Then, the semiconductor integrated circuit 300,the antenna 301, the insulator 302, and the conductive shield 303 aresandwiched between the first insulator 304 b and the second insulator304 a (see FIG. 3C).

Like the first insulator 304 b, a structural body in which a fibrousbody 320 a is impregnated with an organic resin 321 a is used for thesecond insulator 304 a.

As described above, a third insulator 305 b and a fourth insulator 305 amay be provided over the top of the first insulator 304 b and on thebottom of the second insulator 304 a, respectively (see FIG. 3D).

Although not particularly shown, after attaching the first insulator 304b and the second insulator 304 a to each other with a plurality ofsemiconductor integrated circuits 300, antennas 301, insulators 302, andconductive shields 303, which are arranged in the planar direction,sandwiched therebetween, the semiconductor integrated circuits, theantennas, and the conductive shields are separated into individualsemiconductor integrated circuit chips. There is no particularlimitation on a separation means as long as physical separation ispossible, and separation is performed by laser beam irradiation in thisembodiment.

By separation with laser light irradiation, the first insulator 304 band the second insulator 304 a, and the third insulator 305 b and thefourth insulator 305 a are melted and fused together at separationsurfaces, so that the semiconductor integrated circuit 300, the antenna301, the insulator 302, and the conductive shield 303 are sealed withthe first insulator 304 b and the second insulator 304 a, and the thirdinsulator 305 b and the fourth insulator 305 a. As described above, thethird insulator 305 b and the fourth insulator 305 a have an effect ofcovering the side surfaces of the semiconductor integrated circuit 300more successfully in this process. If the side surfaces of thesemiconductor integrated circuit 300 are covered with the firstinsulator 304 b and the second insulator 304 a in an adequatelysuccessful manner, this embodiment is not particularly limited to such astructure.

By forming the structure in this manner, the semiconductor integratedcircuit 300, the antenna 301, the insulator 302, and the conductiveshield 303 are sealed with the first insulator 304 b and the secondinsulator 304 a to be protected.

With the use of the conductive shield 303 formed over the semiconductorintegrated circuit 300 and the antenna 301, an electrostatic breakdown(malfunctions of the circuit or damages to a semiconductor element) ofthe semiconductor integrated circuit 300 due to electrostatic dischargeis prevented. Further, with the use of a pair of insulators whichsandwiches the semiconductor integrated circuit 300, the antenna 301,the insulator 302, and the conductive shield 303 therebetween, a highlyreliable semiconductor device that is reduced in thickness and size andhas resistance to an external stress can be provided. Further, defectsof shapes and characteristics due to an external stress or electrostaticdischarge are prevented in the manufacturing process, so that asemiconductor device can be manufactured with high yield.

Embodiment 2

In this embodiment, a highly reliable semiconductor device and ahigh-yield method for manufacturing a semiconductor device are describedin detail with reference to FIGS. 4A and 4B and FIGS. 5A and 5B. In thisembodiment, as an example of a semiconductor device, a CMOS(complementary metal oxide semiconductor) will be described.

A transistor 410 and a transistor 411, an insulating film 412, aninsulating film 413, an insulating film 414, and an insulating film 415are formed over a substrate 400 having an insulating surface, which is aformation substrate, with a separation layer 401 provided therebetween,whereby a semiconductor integrated circuit 450 is formed (see FIG. 4A).

The transistor 410 is a thin film transistor which includes source anddrain regions 424 a and 424 b, impurity regions 423 a and 423 b whichcontain an impurity at lower concentration than the source and drainregions 424 a and 424 b, a channel formation region 426, a gateinsulating layer 427, a gate electrode layer 428, and insulating layers429 a and 429 b having a sidewall structure. The source and drainregions 424 a and 424 b are in contact with wiring layers 430 a and 430b serving as source and drain electrode layers, respectively, andelectrically connected thereto. In this embodiment, the transistor 410is a p-channel thin film transistor which contains an Impurity element(e.g., boron (B), aluminum (Al), gallium (Ga), or the like) impartingp-type conductivity to the source and drain regions 424 a and 424 b andthe impurity regions 423 a and 423 b which are LDD (lightly doped drain)regions.

The transistor 411 is a thin film transistor which includes source anddrain regions 404 a and 404 b, impurity regions 403 a and 403 b whichcontain an impurity at lower concentration than the source and drainregions 404 a and 404 b, a channel formation region 406, a gateinsulating layer 407, a gate electrode layer 408, and insulating layers409 a and 409 b having a sidewall structure. The source and drainregions 404 a and 404 b are in contact with wiring layers 420 a and 420b serving as source and drain electrode layers, respectively, andelectrically connected thereto. In this embodiment, the transistor 411is an n-channel thin film transistor which contains an impurity element(e.g., phosphorus (P), arsenic (As), or the like) imparting n-typeconductivity to the source and drain regions 404 a and 404 b and theimpurity regions 403 a and 403 b which are LDD regions.

Next, an antenna 440 is formed over the insulating film 415 by using aconductive film. Then, an insulator 441 is formed over the antenna 440.Further, a conductive shield 480 is formed over the insulator 441. Inthis embodiment, a silicon nitride film which is an inorganic insulatingfilm is used for the insulator 441. Although not shown, the antenna 440is electrically connected to the semiconductor integrated circuit 450.

Next, an insulator 442 b is formed over the conductive shield 480. Asthe insulator 442 b, a structural body in which a fibrous body 443 b isimpregnated with an organic resin 444 b may be used (see FIG. 4B).

The conductive shield 480 and insulator 442 b are bonded to each otherand then, the semiconductor integrated circuit 450, the antenna 440, theinsulator 441, and the conductive shield 480 are separated from thesubstrate 400 by using the separation layer 401 as an interface.Accordingly, the semiconductor integrated circuit 450 and the antenna440 are provided on the insulator 442 b side (see FIG. 5A).

The insulator 442 a is bonded by heating a structural body and bondingit by pressure to an exposed separation surface of the semiconductorintegrated circuit 450, so that the semiconductor integrated circuit450, the antenna 440, and the conductive shield 480 are sandwichedbetween the insulator 442 b and the insulator 442 a (see FIG. 5B).

Like the insulator 442 b, a structural body in which a fibrous body 443a is impregnated with an organic resin 444 a may be used for theinsulator 442 a.

Although not particularly shown, after attaching the insulator 442 b andthe insulator 442 a to each other with semiconductor integrated circuitchips including a plurality of semiconductor integrated circuits 450,antennas 440, insulators 441, and conductive shields 480, which arearranged in the planar direction, sandwiched therebetween, thesemiconductor integrated circuits, the antennas, and the conductiveshields are separated into the individual semiconductor integratedcircuit chips. There is no particular limitation on a separation meansas long as physical separation is possible, and separation is performedby laser beam irradiation in this embodiment.

By performing the separation by laser light irradiation, the insulator442 b and the insulator 442 a are melted and fused together atseparation surfaces, whereby the semiconductor integrated circuit chipis sealed with the insulator 442 b and the insulator 442 a.

Note that as described in Embodiment 1, an insulator may be furtherprovided outside the insulators 442 b and 442 a in order to successfullycover the side surface of the semiconductor integrated circuit chip.

By forming a structure in this manner, the semiconductor integratedcircuit 450 is sealed with the insulator 442 b and the insulator 442 aand is protected from electrostatic discharge by the conductive shield480.

The conductive shield 480 shields the semiconductor integrated circuit450 in the semiconductor device from application of static electricityfrom the outside while electromagnetic waves, which should betransmitted and received to/from the antenna 440 included in thesemiconductor device, pass through the conductive shield 480. Theconductive shield 480 diffuses static electricity applied byelectrostatic discharge to let it go or prevents local electric charges(localization of electric charges) (prevents local potential difference)so that an electrostatic breakdown of the semiconductor integratedcircuit 450 can be prevented.

Further, since the insulator and the conductive shield are formed so asto sandwich the semiconductor integrated circuit, adverse effects suchas damage to and defects in characteristic of the semiconductorintegrated circuit due to an external stress or electrostatic dischargecan be prevented also in a manufacturing process. Therefore, asemiconductor device can be manufactured with high yield.

By using an insulator having flexibility for the semiconductor devicemanufactured in this embodiment, the semiconductor device havingflexibility can be obtained.

Semiconductor layers included in the transistors 410 and 411 can beformed using any of the following materials: an amorphous semiconductor(hereinafter also referred to as “AS”) manufactured by a vapor-phasegrowth method or a sputtering method using a semiconductor material gastypified by silane or germane; a polycrystalline semiconductor formed bycrystallizing the amorphous semiconductor with the use of light energyor thermal energy; a microcrystalline (also referred to as semiamorphousor microcrystal) semiconductor (hereinafter also referred to as “SAS”);or the like. The semiconductor layer can be formed by a sputteringmethod, an LPCVD method, a plasma CVD method, or the like.

A microcrystalline semiconductor film belongs to a metastable statewhich is intermediate between an amorphous state and a single crystalstate when Gibbs free energy is considered. That is, themicrocrystalline semiconductor film is a semiconductor having a thirdstate which is stable in terms of free energy and has a short rangeorder and lattice distortion. Columnar-like or needle-like crystals growin a normal direction with respect to a substrate surface. The Ramanspectrum of microcrystalline silicon, which is a typical example of amicrocrystalline semiconductor, is located in lower wave numbers than520 cm⁻¹, which represents a peak of the Raman spectrum ofsingle-crystalline silicon. That is, the peak of the Raman spectrum ofthe microcrystalline silicon exists between 520 cm⁻¹ which representssingle-crystalline silicon and 480 cm⁻¹ which represents amorphoussilicon. The semiconductor includes hydrogen or halogen of at least 1at. % or more to terminate a dangling bond. Moreover, a rare gas elementsuch as helium, argon, krypton, or neon may be included to furtherpromote lattice distortion, so that stability is enhanced and afavorable microcrystalline semiconductor film can be obtained.

The microcrystalline semiconductor film can be formed by ahigh-frequency plasma CVD method with a frequency of several tens toseveral hundreds of megahertz or a microwave plasma CVD apparatus with afrequency of 1 GHz or more. The microcrystalline semiconductor film canbe typically fainted using a dilution of silicon hydride such as SiH₄,Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, or SiF₄ with hydrogen. With a dilution ofsilicon hydride with one or plural kinds of rare gas elements selectedfrom helium, argon, krypton, and neon in addition to and hydrogen, themicrocrystalline semiconductor film can be formed. In that case, theflow rate ratio of hydrogen to silicon hydride is set to be 5:1 to200:1, preferably, 50:1 to 150:1, more preferably, 100:1.

As an example of a typical amorphous semiconductor, hydrogenatedamorphous silicon can be given while polysilicon (polycrystallinesilicon) or the like can be given as an example of a typical crystallinesemiconductor. Polysilicon includes so-called high-temperaturepolysilicon formed using polysilicon which is formed at processingtemperatures of greater than or equal to 800° C. as a main material,so-called low-temperature polysilicon formed using polysilicon which isformed at processing temperatures of less than or equal to 600° C. as amain material, polysilicon formed by crystallization of amorphoussilicon by using an element that promotes crystallization or the like,and the like. It is needles to say that as mentioned above, amicrocrystalline semiconductor or a semiconductor containing a crystalphase in part of a semiconductor layer may be used.

As a material of the semiconductor, as well as an element of silicon(Si), germanium (Ge), or the like, a compound semiconductor such asGaAs, InP, SiC, ZnSe, GaN, or SiGe can be used. Alternatively, an oxidesemiconductor such as zinc oxide (ZnO), tin oxide (SnO₂), magnesium zincoxide, gallium oxide, or indium oxide, an oxide semiconductor formed ofany of the above oxide semiconductors, or the like may be used. Forexample, an oxide semiconductor formed using zinc oxide, indium oxide,and gallium oxide, or a material in which In, Ga, or the like is addedto zinc oxide can also be used. In the case of using zinc oxide for thesemiconductor layer, a gate insulating layer is preferably formed usingY₂O₃, Al₂O₃, TiO₂, or a stack of any of the above. For the gateelectrode layer, the source electrode layer, and the drain electrodelayer, ITO, Au, Ti, or the like is preferably used.

When a crystalline semiconductor layer is used as a semiconductor layer,the crystalline semiconductor layer may be formed by a variety ofmethods (e.g., a laser crystallization method, a thermal crystallizationmethod, a thermal crystallization method using an element that promotescrystallization, such as nickel, and the like). Also, a microcrystallinesemiconductor, which is an SAS, can be crystallized by laser lightirradiation to increase its crystallinity. When the element thatpromotes the crystallization is not introduced, prior to irradiating anamorphous silicon film with laser light, the amorphous silicon film isheated at 500° C. for one hour under a nitrogen atmosphere to releasehydrogen contained in the amorphous silicon film such that theconcentration of hydrogen becomes 1×10²⁰ atoms/cm³ or less. This isbecause the amorphous silicon film containing a large amount of hydrogenis destroyed by laser light irradiation.

There are no particular limitations on a technique for introducing ametal element into an amorphous semiconductor layer as long as atechnique is capable of providing the metal element on a surface or theinside of the amorphous semiconductor layer. For example, a sputteringmethod, a CVD method, a plasma processing method (including a plasma CVDmethod), an adsorption method, or a method for coating a solution ofmetal salt, can be used. In the above mentioned processes, the methodusing a solution is convenient and has an advantage of easily adjustingthe concentration of a metal element. In addition, in order to improvethe wettability of the surface of the amorphous semiconductor layer tospread an aqueous solution on the entire surface of the amorphoussemiconductor layer, an oxide film is preferably formed by UV lightirradiation in an oxygen atmosphere, thermal oxidation, treatment usingozone water containing hydroxy radical or hydrogen peroxide solution, orthe like.

The crystallization may be performed by adding an element which promotescrystallization (also referred to as a catalyst element or a metalelement) to the amorphous semiconductor layer and performing thermaltreatment (at 550 to 750° C. for 3 minutes to 24 hours) in acrystallization step in which an amorphous semiconductor layer iscrystallized to form a crystalline semiconductor layer. As the elementwhich promotes (helps) crystallization, one or more elements of iron(Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium(Pd), osmium (Os), iridium (Ir), platinum (Pt), copper (Cu), and gold(Au) can be used.

In order to remove or reduce the element promoting crystallization fromthe crystalline semiconductor layer, a semiconductor layer containing animpurity element is formed in contact with the crystalline semiconductorlayer and is made to function as a gettering sink. As the impurityelement, an impurity element imparting n-type, an impurity elementimparting p-type, a rare gas element, or the like can be used. Forexample, one or a plurality of kinds of elements such as phosphorus (P),nitrogen (N), arsenic (As), antimony (Sb), bismuth (Bi), boron (B),helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) can beused. The semiconductor layer containing a rare gas element is formedover the crystalline semiconductor layer containing an element whichpromotes crystallization, and a thermal treatment (at 550 to 750° C. for3 minutes to 24 hours) is performed. The element which promotescrystallization in the crystalline semiconductor layer moves into thesemiconductor layer containing a rare gas element, and the element whichpromotes crystallization in the crystalline semiconductor layer isremoved or reduced. Then, the semiconductor layer containing a rare gaselement, which serves as a gettering sink, is removed.

Thermal treatment and laser light irradiation may be combined tocrystallize the amorphous semiconductor layer. Alternatively, one of thethermal treatment and the laser light irradiation may be performedplural times.

Also, a crystalline semiconductor layer may be formed over a substratedirectly by a plasma method. Alternatively, a crystalline semiconductorlayer may be selectively formed over a substrate by a plasma method.

The gate insulating layer 407 and the gate insulating layer 427 may beformed using silicon oxide or a layered structure of silicon oxide andsilicon nitride. The gate insulating layers 407 and 427 may be formed bydepositing an insulating film by a plasma CVD method or a low pressureCVD method or may be formed by solid phase oxidation or solid phasenitridation by plasma treatment. This is because a gate insulating layerformed by oxidation or nitridation of a single crystal semiconductorlayer by plasma treatment is dense, has high withstand voltage, and isexcellent in reliability. For example, a surface of the semiconductorlayer is oxidized or nitrided using nitrous oxide (N₂O) diluted with Arby 1 to 3 times (flow ratio) by application of a microwave (2.45 GHz)power of 3 to 5 kW at a pressure of 10 to 30 Pa. By this process, aninsulating film of 1 to 10 nm (preferably 2 to 6 nm) thick is formed.Further, nitrous oxide (N₂O) and silane (SiH₄) are introduced, and asilicon oxynitride film is formed by a vapor deposition method byapplication of a microwave (2.45 GHz) power of 3 to 5 kW at a pressureof 10 to 30 Pa; accordingly, the gate insulating layer is formed. Thecombination of the solid phase reaction and the reaction by the vapordeposition method can form a gate insulating layer with a low interfacestate density and an excellent withstand voltage.

Alternatively, for the gate insulating layers 407 and 427, a highdielectric constant material such as zirconium dioxide, hafnium oxide,titanium dioxide, or tantalum pentoxide may be used. When a highdielectric constant material is used for the gate insulating layers 407and 427, gate leakage current can be reduced.

Gate electrode layers 408 and 428 can be formed using a CVD method, asputtering method, a droplet discharge method, or the like. The gateelectrode layer may be formed of an element selected from Ag, Au, Cu,Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, and Ba,or an alloy material or a compound material containing the above elementas its main component. Alternatively, a semiconductor film typified by apolycrystalline silicon film doped with an impurity element such asphosphorus, an AgPdCu alloy, or the like may be used as the gateelectrode layers 408 and 428. Alternatively, a single layer structure ora structure of a plurality of layers may be employed: for example, atwo-layer structure of a tungsten nitride film and a molybdenum film.Alternatively, a three-layer structure in which a tungsten film with athickness of 50 nm, an aluminum-silicon alloy (Al—Si) film with athickness of 500 nm, and a titanium nitride film with a thickness of 30nm are sequentially stacked may be employed. In the case where athree-layer structure is employed, tungsten nitride film may be usedinstead of the tungsten film of a first conductive film. Alternatively,aluminum-titanium alloy (Al—Ti) film may be used instead of thealuminum-silicon alloy (Al—Si) film of a second conductive film.Alternatively, a titanium film may be used instead of the titaniumnitride film of a third conductive film.

A light-transmitting material having a light-transmitting property tovisible light can also be used for the gate electrode layers 408 and428. As a light-transmitting conductive material, indium tin oxide(ITO), indium tin oxide containing silicon oxide (ITSO), organic indium,organic tin, zinc oxide, or the like can be used. Alternatively, indiumzinc oxide (IZO) containing zinc oxide (ZnO), zinc oxide (ZnO), ZnOdoped with gallium (Ga), tin oxide (SnO₂), indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, or the like may be used.

If etching processing is required to form the gate electrode layers 408and 428, a mask may be formed and dry etching or wet etching may beperformed. In the case of dry etching, by using an ICP (inductivelycoupled plasma) etching method and controlling etching conditions (e.g.,the amount of electric power applied to a coiled electrode, the amountof electric power applied to an electrode on a substrate side, or theelectrode temperature on the substrate side) as appropriate, theelectrode layer can be etched into a tapered shape. Note that as anetching gas, a chlorinated gas such as Cl₂, BCl₃, SiCl₄, and CCl₄, afluorinated gas such as CF₄, SF₆, and NF₃, or O₂ may be used asappropriate.

The insulating layers 409 a, 409 b, 429 a, and 429 b having a sidewallstructure may be formed in a self-aligning manner by forming aninsulating layer, which covers the gate electrode layers and thesemiconductor layers, and processing the insulating layer by anisotropicetching of an RIE (reactive ion etching) method. Here, there is noparticular limitations on the insulating layer, but the insulating layeris preferably formed using silicon oxide which is formed by reactingTEOS (tetraethyl orthosilicate), silane, or the like and oxygen, nitrousoxide, or the like and which has favorable step coverage. The insulatinglayer can be formed by a thermal CVD method, a plasma CVD method, anatmospheric pressure CVD method, a bias ECRCVD method, a sputteringmethod, or the like.

Although a single-gate structure is described as the structure of thetransistor in this embodiment, a transistor having a multi-gatestructure such as a double-gate structure may alternatively be employed.In this case, gate electrode layers may be provided above and below thesemiconductor layer or a plurality of gate electrode layers may beprovided only on one side (above or below) of the semiconductor layer.

Alternatively, silicides may be provided over the source and drainregions of the transistor. The silicides are formed by formingconductive films over the source and drain regions of the semiconductorlayer and reacting silicon in the exposed source and drain regions ofthe semiconductor layer with the conductive films by heat treatment, aGRTA method, an LRTA method, or the like. The silicide may be formed bylaser irradiation or light irradiation with a lamp. As a material of theconductive film which forms the silicide, any of the followings can beused: titanium (Ti), nickel (Ni), tungsten (W), molybdenum (Mo), cobalt(Co), zirconium (Zr), hafnium (Hf), tantalum (Ta), vanadium (V),neodymium (Nd), chromium (Cr), platinum (Pt), palladium (Pd), and thelike.

The wiring layers 420 a, 420 b, 430 a, and 430 b each function as asource electrode layer or a drain electrode layer can be formed bydepositing a conductive film by a PVD method, a CVD method, anevaporation method, or the like, and then etching the conductive filmsuch that it has desired shapes. Alternatively, the wiring layer can beformed selectively at a predetermined place by a printing method, anelectroplating method, or the like. Further, a reflow method and adamascene method may be used as well. As a material of the wiring layers420 a, 420 b, 430 a, and 430 b, metal such as Ag, Au, Cu, Ni, Pt, Pd,Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, or Ba, a semiconductor suchas Si or Ge, or an alloy or a nitride thereof can be used. Further, alight-transmitting material can also be used.

As the light-transmitting conductive material, indium tin oxide (ITO),indium tin oxide containing silicon oxide (ITSO), indium zinc oxide(IZO) containing zinc oxide (ZnO), zinc oxide (ZnO), ZnO doped withgallium (Ga), tin oxide (SnO₂), indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, or the likecan be used.

Silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide,aluminum nitride, aluminum oxynitride, or another inorganic insulatingmaterial can be used for the insulating films 412, 413, 414, and 415.

With the use of a conductive shield covering a semiconductor integratedcircuit, an electrostatic breakdown (malfunctions of the circuit ordamages to a semiconductor element) of the semiconductor integratedcircuit due to electrostatic discharge is prevented. Further, with theuse of an insulator which covers the semiconductor integrated circuit, ahighly reliable semiconductor device that is reduced in thickness andsize and has resistance to an external stress can be provided. Further,defects of shapes and characteristics due to an external stress orelectrostatic discharge are prevented in the manufacturing process, sothat a semiconductor device can be manufactured with high yield.

In the semiconductor device which is one embodiment of the presentinvention, as a semiconductor element, not to mention a field-effecttransistor, a memory element which uses a semiconductor layer can beemployed; accordingly, a semiconductor device which can fulfillfunctions required for various applications can be manufactured andprovided.

Embodiment 3

In this embodiment, an example of a semiconductor device having amemory, as a semiconductor device which has higher reliability, and amanufacturing method thereof will be described with reference to FIGS.6A to 6E, FIGS. 7A to 7C, and FIGS. 8A and 8B.

A semiconductor device of this embodiment includes a memory including amemory cell array and a driver circuit portion which drives the memorycell array.

A separation layer 601 is formed over a substrate 600 which is aformation substrate and an insulating film 602 serving as a base film isformed over the separation layer 601.

Then, a semiconductor film is formed over the insulating film 602. Thesemiconductor film may be formed by a method (a sputtering method, anLPCVD method, a plasma CVD method or the like) to be 25 to 200 nm thick(preferably, 30 to 150 nm thick).

In this embodiment, an amorphous semiconductor film is formed over theinsulating film 602, and the amorphous semiconductor film iscrystallized by laser beam irradiation; accordingly, a semiconductorfilm that is a crystalline semiconductor film is formed.

The semiconductor film obtained as described above may be selectivelydoped with the slight amount of impurity elements (boron or phosphorus)for controlling threshold voltage of a thin film transistor. This dopingof an impurity element may be performed on an amorphous semiconductorfilm before a crystallization step. When the amorphous semiconductorfilm is doped with impurity elements, the impurities can be activated bythermal treatment for crystallization later. Further, a defect and thelike generated in doping can be repaired as well.

Next, the semiconductor film is processed into a desired shape using amask. In this embodiment, after an oxide film formed on thesemiconductor film is removed, another oxide film is formed. Then, aphotomask is formed, and processing treatment using photolithography isperformed, so that semiconductor layers 603, 604, 605, and 606 areformed. For end portions of the semiconductor layers, inclination angles(taper angles) may be provided.

The etching may be carried out by either plasma etching (dry etching) orwet etching. For treating a large-sized substrate, plasma etching issuitable. As an etching gas, a gas containing fluorine or chlorine suchas CF₄, NF₃, Cl₂, or BCl₃ is used, and an inert gas such as He or Ar maybe appropriately added thereto. Alternatively, localized electricdischarge is possible when the etching is employed by atmosphericpressure discharge, and thus etching can be performed without forming amask over an entire substrate.

An insulating film 610 is formed over the semiconductor layer 605. Theinsulating film 610 may be formed using silicon oxide or a layeredstructure of silicon oxide and silicon nitride. The insulating film 610may be formed by deposition of the insulating layer by a plasma CVDmethod or a low pressure CVD method. It is preferable that theinsulating layer be subjected to solid-phase oxidation or solid-phasenitriding by plasma treatment to form the insulating film 610. This isbecause an insulating layer which is formed through oxidation ornitridation of the semiconductor layer (typically, a silicon layer) byplasma treatment is dense, and has high withstand voltage and highreliability. The insulating film 610 is used as a tunnel insulatinglayer for injecting charges into a charge accumulation layer 611;therefore, a strong insulating film is preferable. This insulating film610 is preferably formed to a thickness of 1 nm to 20 nm, and morepreferably, 3 nm to 6 nm.

The insulating film 610 is preferably formed by plasma treatment in sucha way that, for example, a silicon oxide layer is formed with athickness of 3 nm to 6 nm over the semiconductor layer by plasmatreatment under an oxygen atmosphere, and a nitrogen-plasma-treatedlayer is formed by treating the surface of the silicon oxide layer withnitrogen plasma under a nitrogen atmosphere. Specifically, first, asilicon oxide layer with a thickness of 3 nm to 6 nm is formed over thesemiconductor layer by plasma treatment under an oxygen atmosphere.Then, a nitrogen-plasma-treated layer with a high concentration ofnitrogen is formed over the surface or in the vicinity of the surface ofthe silicon oxide layer by performance of plasma treatment under anitrogen atmosphere successively. Note that the vicinity of the surfacerefers to a depth of approximately 0.5 nm to 1.5 nm from a surface ofthe silicon oxide layer. For example, by conducting plasma treatmentunder a nitrogen atmosphere, a structure is obtained in which thesilicon oxide layer contains 20 to 50 at. % nitrogen in a region fromthe surface to a depth of about 1 nm.

A surface of a silicon layer as a typical example of the semiconductorlayer is oxidized by plasma treatment, whereby a dense oxide layer thathas few distortion in an interface can be formed. In addition, throughnitridation by plasma treatment of the oxide layer, oxygen on a surfacelayer portion is substituted for by nitrogen and a nitrogen layer isformed, whereby the layer can be made even denser. Consequently, aninsulating layer which is high in withstand voltage can be formed.

In any event, through use of the aforementioned solid phase oxidation orsolid phase nitridation by the plasma treatment, even if a glasssubstrate with a heat resistance temperature of less than or equal to700° C. is used, an insulating layer similar to a thermal oxidation filmthat is formed at a temperature of from 950 to 1050° C. can be obtained.Thus, a tunnel insulating layer having high reliability can be formed asthe tunnel insulating layer of the nonvolatile memory element.

The charge accumulation layer 611 is formed over the insulating film610. This charge accumulation layer 611 may be provided as either asingle layer or stacked layers.

The charge accumulation layer 611 can be a floating gate formed of alayer or particles of a semiconductor material or conductive material.As the semiconductor material, silicon, silicon germanium, or the likecan be given. When silicon is used, amorphous silicon or polysilicon canbe used. Further, polysilicon doped with phosphorus can also be used. Asthe conductive material, an element selected from tantalum (Ta),titanium (Ti), molybdenum (Mo), or tungsten (W); an alloy including theelement as a main component; an alloy film in which the element iscombined (representatively, a Mo—W alloy film or a Mo—Ta alloy film); ora silicon film having conductivity may be used. Under the conductivelayer formed of such a material, a nitride such as tantalum nitride,tungsten nitride, titanium nitride, or molybdenum nitride; or a silicidesuch as tungsten silicide, titanium silicide, or molybdenum silicide maybe formed. Further, a layered structure which includes theabove-described semiconductor materials, conductive materials, or theabove-described semiconductor material and the conductive material maybe employed. For example, a layered structure of a silicon layer and agermanium layer may be used.

Alternatively, the charge accumulation layer 611 may be formed as aninsulating material having a trap which holds charges. As a typicalexample of such materials, a silicon compound or a germanium compoundcan be given. As the silicon compound, silicon nitride, siliconoxynitride, silicon oxynitride to which hydrogen is added, or the likecan be given. As examples of the germanium compound, germanium nitride,germanium nitride to which oxygen is added, germanium oxide to whichnitrogen is added, germanium nitride to which oxygen and hydrogen areadded, germanium oxide to which nitrogen and hydrogen are added, and thelike can be given.

Next, a mask which covers the semiconductor layers 603, 604, and 606 isformed. By using the mask and the charge accumulation layer 611 asmasks, an impurity element that imparts n-type conductivity is added toform n-type impurity regions 662 a and 662 b. In this embodiment,phosphorus (P) which is an impurity element imparting n-typeconductivity is used as the impurity element. Here, the impurity elementimparting n-type conductivity is added so that the n-type impurityregions 662 a and 662 b contain the n-type impurity element atconcentrations of approximately 1×10¹⁷ atoms/cm³ to 5×10¹⁸ atoms/cm³.The mask covering the semiconductor layers 603, 604, and 606 is removed.

An oxide film over the semiconductor layer 606 is removed, and a gateinsulating layer 609 covering the semiconductor layer 605, thesemiconductor layer 606, the insulating film 610, and the chargeaccumulation layer 611 is formed. When the gate insulating layer 609 hasa large thickness in a memory cell array, the thin film transistor andthe memory element can have high resistance against high voltage;accordingly reliability can be improved.

Note that although the gate insulating layer 609 formed over thesemiconductor layer 605 serves as a control insulating layer in a memoryelement which is completed later, the insulating layer 609 formed overthe semiconductor layer 606 serves as a gate insulating layer of a thinfilm transistor. Therefore, the layer is called the gate insulatinglayer 609 in this specification.

The oxide film over the semiconductor layers 603 and 604 is removed, anda gate insulating layer 608 covering the semiconductor layers 603 and604 is formed (see FIG. 6A). The gate insulating layer 608 can be formedby a plasma CVD method, a sputtering method, or the like. The gateinsulating layer 608 of the thin film transistor provided in the drivercircuit portion preferably has a thickness of more than or equal to 1 nmand less than or equal to 10 nm, more preferably, approximately 5 nm.Thinning of the gate insulating layer 608 has an effect of driving thetransistor in the driver circuit portion at high speed and low voltage.

The gate insulating layer 608 may be formed using silicon oxide, or witha layered structure of silicon oxide and silicon nitride. The gateinsulating layer 608 may be formed by depositing an insulating film by aplasma CVD method or a low pressure CVD method or may be formed by solidphase oxidation or solid phase nitridation by plasma treatment. This isbecause a gate insulating layer formed by oxidizing or nitriding asemiconductor layer by plasma treatment is dense, and has highdielectric strength and excellent reliability.

As the gate insulating layer 608, a high dielectric constant materialmay be used. If a high dielectric constant material is used for the gateinsulating layer 608, a gate leakage current can be reduced. As the highdielectric constant material, zirconium dioxide, hafnium oxide, titaniumdioxide, tantalum pentoxide, or the like can be used. Further, a siliconoxide layer may be formed by solid-phase oxidation by plasma treatment.

Further, a thin silicon oxide film can also be formed by oxidizing thesurface of the semiconductor region by a GRTA method, an LRTA method, orthe like, thereby forming a thermal oxide film. Note that a rare gaselement such as argon is preferably included in a reactive gas and ispreferably mixed in the insulating film to be formed in order to form adense insulating film with few gate leak current at a low film-formationtemperature.

Next, a first conductive film with a thickness of 20 nm to 100 nm and asecond conductive film with a thickness of 100 nm to 400 nm are stackedas gate electrode layers over the gate insulating layers 608 and 609.The first and second conductive films can be formed by a sputteringmethod, an evaporation method, a CVD method, or the like. The first andsecond conductive films may be formed using an element selected fromtantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum(Al), copper (Cu), chromium (Cr), and neodymium (Nd), or an alloy orcompound material containing the above material as a main component. Asemiconductor film typified by a polycrystalline silicon film doped withan impurity element such as phosphorus or an AgPdCu alloy may also beused as the first conductive film and the second conductive film.Further, the structure of the first conductive film and the secondconductive film is not limited to a two-layer structure, but athree-layer structure may also be employed, for example, such that atungsten film with a thickness of 50 nm, an aluminum-silicon (Al—Si)alloy film with a thickness of 500 nm, and a titanium nitride film witha thickness of 30 nm are sequentially stacked as the first to thirdconductive films. In the case where a three-layer structure is employed,a tungsten nitride film may be used instead of the tungsten film of thefirst conductive film. Alternatively, an aluminum-titanium alloy (Al—Ti)film may be used instead of the aluminum-silicon alloy (Al—Si) film ofthe second conductive film. Alternatively, a titanium film may be usedinstead of the titanium nitride film of the third conductive film.Alternatively, a single layer structure may be employed. In thisembodiment, tantalum nitride is formed to have a thickness of 30 nm forthe first conductive film, and tungsten (W) is formed to have athickness of 370 nm for the second conductive film.

The first conductive film and the second conductive film are etched, andthen first gate electrode layers 612, 613, and 614, second gateelectrode layers 616, 617, and 618, a first control gate electrode layer615, and a second control gate electrode layer 619 are formed (see FIG.6B).

Although this embodiment shows an example in which the first gateelectrode layer (a first control gate electrode layer) and the secondgate electrode layer (a second control gate electrode layer) are formedso as to have vertical side surfaces, the present invention is notlimited to this. Both the first gate electrode layer (the first controlgate electrode layer) and the second gate electrode layer (the secondcontrol gate electrode layer) may have a tapered shape or one of thefirst gate electrode layer (the first control gate electrode layer) andthe second gate electrode layer (the second control gate electrodelayer) may have a tapered shape and the other thereof may have verticalside surfaces through anisotropic etching. The taper angles of thestacked gate electrode layers may be different or the same. With atapered shape, coverage of a film to be stacked thereover is improvedand a defect is reduced, which leads to improve reliability.

The gate insulating layers 608 and 609 may be etched to some extent andthinned (so-called film reduction) by the etching step in forming thegate electrode layers (and the control gate electrode layers).

Next, a mask 621 which covers the semiconductor layer 604 and a mask 663which covers the semiconductor layers 605 and 606 are formed. Animpurity element 620 imparting p-type conductivity is added using themasks 621 and 663, the first gate electrode layer 612, and the secondgate electrode layer 616 as masks to form a p-type impurity region 622 aand a p-type impurity region 622 b. In this embodiment, boron (B) isused as the impurity element. Here, the impurity element is added sothat the p-type impurity regions 622 a and 622 b contain the impurityelement that imparts p-type conductivity at a concentration ofapproximately 1×10²⁰ atoms/cm³ to approximately 5×10²¹ atoms/cm³. Inaddition, a channel formation region 623 is formed in the semiconductorlayer 603 (see FIG. 6C).

The p-type impurity regions 622 a and 622 b are high concentrationp-type impurity regions which function as a source region and a drainregion.

Next, a mask 625 which covers the semiconductor layer 603 is formed. Animpurity element 624 which imparts n-type conductivity is added usingthe mask 625, the first gate electrode layer 613, the second gateelectrode layer 617, the first gate electrode layer 614, the second gateelectrode layer 618, the first control gate electrode layer 615, and thesecond control gate electrode layer 619 as masks, so that n-typeimpurity regions 626 a, 626 b, 664 a, 664 b, 627 a, 627 b, 628 a, and628 b are formed. In this embodiment, phosphorus (P) is used as theimpurity element. Here, the impurity element is added so that the n-typeimpurity regions 626 a, 626 b, 627 a, 627 b, 628 a, and 628 b containthe impurity element that imparts n-type conductivity at a concentrationof approximately 5×10¹⁹ atoms/cm³ to approximately 5×10²⁰ atoms/cm³. Inaddition, a channel formation region 629, a channel formation region630, and a channel formation region 631 are formed in the semiconductorlayer 604, the semiconductor layer 605, and the semiconductor layer 606,respectively (see FIG. 6D).

The n-type impurity regions 626 a, 626 b, 627 a, 627 b, 628 a, and 628 bare high concentration n-type impurity regions which serve as sourceregions and drain regions. On the other hand, the n-type impurity region664 a and the n-type impurity region 664 b are low concentrationimpurity regions which become LDD regions.

The mask 625 is removed by O₂ ashing or with a resist stripper, wherebyan oxide film is also removed. After that, insulating films, so-calledsidewalls, may be formed so as to cover the side surfaces of the gateelectrode layers. The sidewall may be formed of an insulating filmcontaining silicon by a plasma CVD method and a low pressure CVD (LPCVD)method.

In order to activate the impurity element, heat treatment, strong lightirradiation, or laser light irradiation may be performed. At the sametime as the activation, plasma damage to the gate insulating layer andto an interface between the gate insulating layer and the semiconductorlayer can be recovered.

Subsequently, the interlayer insulating layer which covers the gateinsulating layer and the gate electrode layer is formed. In thisembodiment, a layered structure of an insulating film 667 and aninsulating film 668 is employed. The insulating films 667 and 668 eachmay be a silicon nitride film, a silicon nitride oxide film, a siliconoxynitride film, or a silicon oxide film formed by a sputtering methodor plasma CVD. Further, another insulating film containing silicon mayalso be employed to have a single layer structure or a layered structureincluding three or more layers.

Further, thermal treatment is performed in a nitrogen atmosphere at 300to 550° C. for 1 to 12 hours, thereby the semiconductor layer ishydrogenated. Preferably, this step is performed at 400 to 500° C. Thisstep is a step of terminating dangling bonds in the semiconductor layerby using hydrogen contained in the insulating film 667 which is theinterlayer insulating layer. In this embodiment, heat treatment ispertained at 410° C. for one hour.

The insulating films 667 and 668 can alternatively be formed of amaterial selected from aluminum nitride, aluminum oxynitride, aluminumnitride oxide containing more nitrogen than oxygen, aluminum oxide,diamond-like carbon (DLC), a nitrogen-containing carbon film (CN), oranother substance containing an inorganic insulating material.Alternatively, a siloxane resin may be used. The siloxane resincorresponds to a resin including Si—O—Si bonding.

Subsequently, contact holes (opening portions) which reach theinsulating films 667 and 668 and the gate insulating layers 608 and 609are formed using a resist mask. Etching may be performed once or aplurality of times according to a selection ratio of a material to beused. Through the etching, the insulating films 668 and 667 and the gateinsulating layers 608 and 609 are removed, whereby opening portionsreaching the p-type impurity regions 622 a and 622 b and the n-typeimpurity regions 626 a, 626 b, 627 a, 627 b, 628 a, and 628 b which aresource regions and drain regions are formed. Either wet etching or dryetching may be performed, or both wet etching and dry etching may beperformed. A hydrofluoric acid-based solution such as a mixed solutionof hydrogen fluoride and ammonium fluoride may be used as an etchant ofwet etching. As an etching gas, a chlorine based gas typified by Cl₂,BCl₃, SiCl₄, CCl₄, or the like, a fluorine based gas typified by CF₄,SF₆, NF₃, or the like, or O₂ can be appropriately used. Further, aninert gas may be added to an etching gas to be used. As an inert elementto be added, one or a plurality of elements selected from He, Ne, Ar,Kr, and Xe can be used.

A conductive film is formed so as to cover the opening portions and isetched, whereby wiring layers 669 a, 669 b, 670 a, 670 b, 671 a, 671 b,672 a, and 672 b each of which is a source electrode layer or a drainelectrode layer electrically connected to part of a source region or adrain region are formed. The wiring layers can be formed by forming theconductive film by a PVD method, a CVD method, an evaporation method, orthe like, and then, etching the conductive film into a desired shape. Inaddition, a conductive layer can be selectively formed in apredetermined position by a droplet discharge method, a printing method,an electrolytic plating method, or the like. Further, a reflow methodand a damascene method may be used as well. As a material for the sourceand the drain electrode layers, a metal such as Ag, Au, Cu, Ni, Pt, Pd,Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, or Ba, or Si or Ge, an alloyor nitride thereof can be used. Further, a layered structure of thesemay be used. In this embodiment, titanium (Ti) is formed to be 60 nmthick, titanium nitride is formed to be 40 nm thick, aluminum (Al) isfoamed to be 700 nm thick, and titanium (Ti) is formed to be 200 nmthick, and then, the layered structure is processed into a desiredshape.

Through the above steps, a semiconductor integrated circuit 650 can beformed, which includes, in a driver circuit portion, a thin filmtransistor 673 which is a p-channel thin film transistor having p-typeimpurity regions and a thin film transistor 674 which is an n-channelthin film transistor having n-type impurity regions; and in a memorycell array, a memory element 675 having n-type impurity regions and athin film transistor 676 which is an n-channel thin film transistorhaving n-type impurity regions (see FIG. 6E)

In this embodiment, an insulating layer 690 is formed over thesemiconductor integrated circuit 650 (see FIG. 7A). Next, a conductivelayer 680 that serves as an antenna is formed over the insulating layer690, and an insulator 681 is formed as a protective layer over theconductive layer 680. Further, a conductive shield 682 is formed overthe insulator 681 (see FIG. 7B).

As the insulator 683, a structural body in which a fibrous body 686 isimpregnated with an organic resin 687 is used. The structural body isheated and bonded to the semiconductor integrated circuit 650, theconductive layer 680, the insulator 681, and the conductive shield 682by pressure. Then, the semiconductor integrated circuit 650, theconductive layer 680, the insulator 681, and the conductive shield 682are separated from the substrate 600 by using the separation layer 601as an interface. Accordingly, the semiconductor integrated circuit 650,the conductive layer 680, the insulator 681, and the conductive shield682 are provided on the insulator 683 side (see FIG. 7C).

A bonding layer 689 is formed on an exposed separation surface of thesemiconductor integrated circuit 650, and the semiconductor integratedcircuit 650, the conductive layer 680, the insulator 681, and theconductive shield 682 are sandwiched between the insulator 683 and aninsulator 685 (see FIG. 8A).

Like the insulator 683, a structural body in which a fibrous body 686 isimpregnated with an organic resin 687 is used as the insulator 685.

Although not particularly shown, after attaching the insulators 683 and685 to each other with semiconductor integrated circuit chips includinga plurality of semiconductor integrated circuits 650, conductive layers680, insulators 681, and conductive shields 682, which are arranged inthe planar direction, sandwiched therebetween, the semiconductorintegrated circuits, the antennas, and the conductive shields areseparated in to the individual semiconductor integrated circuit chips.There is no particular limitation on a separation means as long asphysical separation is possible, and separation is performed by laserbeam irradiation in this embodiment.

By performing the separation by laser light irradiation, the insulator683 and the insulator 685 are melted and fused together at separationsurfaces, whereby the semiconductor integrated circuit chip is sealedwith the insulator 683 and the insulator 685.

Note that as described in Embodiment 1, insulators 801 and 802 may befurther provided outside the insulators 683 and 685 in order tocertainly cover the side surface of the semiconductor integrated circuitchip (see FIG. 8B).

By forming a structure in this manner, the semiconductor integratedcircuit 650 is sealed with the insulator 683 and the insulator 685 orthe insulators 683 and 685 and the insulators 801 and 802 and isprotected from electrostatic discharge by the conductive shield 682which is provided on the top side of the conductive layer 680 serving asan antenna.

The conductive shield 682 shields the semiconductor integrated circuit650 in the semiconductor device from application of static electricityfrom the outside without interrupting electromagnetic waves which shouldbe transmitted and received to/from the conductive layer 680 serving asthe antenna included in the semiconductor device. The conductive shield682 diffuses static electricity applied by electrostatic discharge tolet it go or prevents local electric charges (localization of electriccharges) (prevents local potential difference) so that an electrostaticbreakdown of the semiconductor integrated circuit 650 can be prevented.

Further, since the insulators are formed so as to sandwich thesemiconductor integrated circuit, adverse effects such as damage anddefects in characteristic of the semiconductor integrated circuit due toan external stress or electrostatic discharge can be prevented also in amanufacturing process. Therefore, a semiconductor device can bemanufactured with high yield.

With the use of a conductive shield covering a semiconductor integratedcircuit, an electrostatic breakdown (malfunctions of the circuit ordamages to a semiconductor element) due to electrostatic discharge ofthe semiconductor integrated circuit is prevented. Further, with the useof the pair of insulators which sandwich the semiconductor integratedcircuit, a highly reliable semiconductor device that is reduced inthickness and size and has resistance to an external stress can beprovided. Further, defects of shapes and characteristics due to anexternal stress or electrostatic discharge are prevented in themanufacturing process, so that a semiconductor device can bemanufactured with high yield.

By using an insulator having flexibility for the semiconductor devicemanufactured in this embodiment, the semiconductor device havingflexibility can be obtained.

Embodiment 4

In this embodiment, an example of a semiconductor device aimed at havinghigher reliability is described. Specifically, as examples of thesemiconductor device, examples of a microprocessor and a semiconductordevice which has an arithmetic function and can transmit and receivedata without contact are described.

FIG. 9 illustrates an example of a microprocessor 900 as an example ofthe semiconductor device. This microprocessor 900 is manufactured byusing the semiconductor device according to any of the above-describedembodiments. The microprocessor 900 includes an arithmetic logic unit(also referred to as ALU) 901, an ALU controller 902, an instructiondecoder 903, an interrupt controller 904, a timing controller 905, aregister 906, a register controller 907, a bus interface (Bus I/F) 908,a read only memory 909, and a memory interface (ROM I/F) 910.

An instruction input to the microprocessor 900 through the bus interface908 is input to the instruction decoder 903 and decoded therein. Then,the instruction is input to the ALU controller 902, the interruptcontroller 904, the register controller 907, and the timing controller905. The ALU controller 902, the interrupt controller 904, the registercontroller 907, and the timing controller 905 perform a variety ofcontrols based on the decoded instruction. Specifically, the ALUcontroller 902 generates signals to control operation of the ALU 901.The interrupt controller 904 judges an interrupt request from anexternal input/output device or a peripheral circuit based on itspriority or a mask state, and processes the request while a program isexecuted in the microprocessor 900. The register controller 907generates an address of the register 906, and reads and writes datafrom/to the register 906 in accordance with the state of themicroprocessor 900. The timing controller 905 generates signals forcontrolling timing of operation of the ALU 901, the ALU controller 902,the instruction decoder 903, the interrupt controller 904, and theregister controller 907. For example, the timing controller 905 isprovided with an internal clock generator for generating an internalclock signal CLK2 based on a reference clock signal CLK1, and suppliesthe internal clock signal CLK2 to each of the above-mentioned circuits.Note that FIG. 9 illustrates a mere example of the simplified structureof the microprocessor 900, and practical microprocessors can be providedwith various structures depending on the usage.

Next, an example of a semiconductor device provided with an arithmeticfunction by which data can be transmitted/received without contact willbe described with reference to FIG. 10. FIG. 10 illustrates an exampleof a computer which operates to transmit and receive signals to/from anexternal device by wireless communication (such a computer ishereinafter referred to as an “RFCPU”). An RFCPU 1001 has an analogcircuit portion 1002 and a digital circuit portion 1003. The analogcircuit portion 1002 has a resonance circuit 1004 with a resonancecapacitor, a rectifier circuit 1005, a constant voltage circuit 1006, areset circuit 1007, an oscillator circuit 1008, a demodulation circuit1009, and a modulation circuit 1010. The digital circuit portion 1003includes an RF interface 1011, a control register 1012, a clockcontroller 1013, an interface 1014, a central processing unit (CPU)1015, a random access memory (RAM) 1016, and a read only memory (ROM)1017.

An example of the operation of the RFCPU 1001 having such aconfiguration is as follows. The resonance circuit 1004 generates aninduced electromotive force based on a signal received by an antenna1018. The capacitor portion 1019 is charged with the inducedelectromotive force via the rectifier circuit 1005. This capacitorportion 1019 is preferably formed using a capacitor such as a ceramiccapacitor or an electric double layer capacitor. The capacitor portion1019 is not necessarily formed over the same substrate as the RFCPU 1001and may be attached, as another component, to a substrate having aninsulating surface that partially constitutes the RFCPU 1001.

The reset circuit 1007 generates a signal that resets and initializesthe digital circuit portion 1003. For example, the reset circuit 1007generates a signal which rises after rise in the power supply voltagewith delay as a reset signal. The oscillator circuit 1008 changes thefrequency and duty ratio of a clock signal in response to a controlsignal generated by the constant voltage circuit 1006. The demodulationcircuit 1009 having a low pass filter, for example, binarizes changes inamplitude of reception signals of an amplitude shift keying (ASK)system. The modulation circuit 1010 changes the amplitude oftransmission signals of an amplitude shift keying (ASK) system to betransmitted. The modulation circuit 1010 changes the resonance point ofthe resonance circuit 1004, thereby changing the amplitude ofcommunication signals. The clock controller 1013 generates a controlsignal for changing the frequency and duty ratio of a clock signal inaccordance with the power supply voltage or a consumption current of thecentral processing unit (CPU) 1015. The power supply voltage ismonitored by a power supply control circuit 1020.

A signal input from the antenna 1018 to the RFCPU 1001 is demodulated inthe demodulation circuit 1009. After that, the signal is decomposed intoa control command, data, and the like in the RF interface 1011. Thecontrol command is stored in the control register 1012. The controlcommand includes reading of data stored in the read only memory (ROM)1017, writing of data to the random access memory (RAM) 1016, anarithmetic instruction to the central processing unit (CPU) 1015, andthe like. The central processing unit (CPU) 1015 accesses the read onlymemory (ROM) 1017, the random access memory (RAM) 1016, and the controlregister 1012 via the interface 1014. The interface 1014 has a functionof generating an access signal for any of the read only memory (ROM)1017, the random access memory (RAM) 1016, and the control register 1012based on a request from the central processing unit (CPU) 1015.

As an arithmetic method of the central processing unit (CPU) 1015, amethod may be employed in which the read only memory (ROM) 1017 storesan OS (operating system) program and a program is read and executed atthe time of starting operation. Alternatively, a method in which acircuit dedicated to arithmetic is formed and an arithmetic process isconducted using hardware may be employed. As for a method in which bothhardware and software are used, a method can be employed in which partof arithmetic process is conducted in the circuit dedicated toarithmetic and the other part of the arithmetic process is conducted bythe central processing unit (CPU) 1015 using a program.

Also in the microprocessor in this embodiment, by the conductive shieldcovering the semiconductor integrated circuit, an electrostaticbreakdown (malfunctions of the circuit or damages to a semiconductorelement) due to electrostatic discharge of the semiconductor integratedcircuit can be prevented. Further, with the use of the pair ofinsulators which sandwiches the semiconductor integrated circuit, ahighly reliable semiconductor device that is reduced in thickness andsize and has resistance to an external stress can be provided. Further,defects of shapes and characteristics due to an external stress orelectrostatic discharge are prevented in the manufacturing process, sothat a semiconductor device can be manufactured with high yield.

Embodiment 5

In this embodiment, examples of usage modes of the semiconductor deviceshown in the above embodiment will be described. Specifically, anapplication example of a semiconductor device to/from which data can beinput and output without contact is described with reference todrawings. The semiconductor device capable of inputting and outputtingdata without contact is also referred to as an RFID tag, an ID tag, anIC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, or awireless chip.

One example of a top structure of a semiconductor device described inthis embodiment is described with reference to FIGS. 11A to 11C. Thesemiconductor device shown in FIG. 11A includes a semiconductorintegrated circuit chip 1100 provided with an antenna (also denoted asan integrated antenna) and a supporting substrate 1106 provided with anantenna 1105 (also denoted as a booster antenna). The semiconductorintegrated circuit chip 1100 is provided over an insulating layer 1104which is formed over the supporting substrate 1106 and the antenna 1105.

Elements such as a plurality of transistors included in a memory portionor a logic portion are provided in a semiconductor integrated circuitwhich is provided in the semiconductor integrated circuit chip 1100. Inthe semiconductor device according to this embodiment, as asemiconductor element, not to mention a field-effect transistor, amemory element which uses a semiconductor layer, or the like can beemployed; accordingly, a semiconductor device which can fulfillfunctions required for various applications can be manufactured andprovided.

Next, a structure and arrangement of the semiconductor integratedcircuit chip 1100 and the antenna 1105 will be described. FIG. 11B is aperspective view of a semiconductor device in which the semiconductorintegrated circuit chip 1100 and the antenna 1105 formed over thesupporting substrate 1106, which are shown in FIG. 11A, are stacked.FIG. 11C is a cross-sectional view of FIG. 11B along dashed line X-Y.

A semiconductor integrated circuit 1110, a conductive layer 1111 servingas an antenna, and a conductive shield 1112 in FIG. 11C are sandwichedbetween insulators 1113 and 1114. The side surfaces of the semiconductorintegrated circuit 1110, the conductive layer 1111, and the conductiveshield 1112 are also covered with the insulators 1113 and 1114. Althoughnot particularly shown, the semiconductor integrated circuit 1110 andthe conductive layer 1111 serving as the antenna are electricallyconnected to each other, and an insulator is provided between theconductive layer 1111 serving as the antenna and the conductive shield1112 so as not to directly connect them to each other. In thisembodiment, after the insulators 1113 and 1114 are attached to eachother with a plurality of semiconductor integrated circuits 1110,conductive layers 1111, and conductive shields 1112 sandwichedtherebetween, the semiconductor integrated circuits are separated intoindividual semiconductor integrated circuits, whereby the semiconductorintegrated circuit chip 1100 is formed. There is no particularlimitation on a separation means as long as physical separation ispossible. By performing the separation by laser light irradiation, theinsulators 1113 and 1114 are melted and fused together at separationsurfaces, whereby the side surfaces of the semiconductor integratedcircuit 1110 can be successfully sealed with the insulators 1113 and1114.

The semiconductor device which is one embodiment of the presentinvention includes the semiconductor integrated circuit 1110, theconductive layer 1111 serving as an antenna, and the conductive shield1112 which is provided between the insulators 1113 and 1114 (on thesemiconductor integrated circuit side or the opposite side thereof).Electromagnetic waves which should be transmitted and received to/fromthe antenna included in the semiconductor device pass through theconductive shield 1112, and the conductive shield 1112 shields thesemiconductor integrated circuit in the semiconductor device fromapplication of static electricity from the outside.

Further, in FIG. 12A, the antenna 1105 is provided so as to surround thesemiconductor integrated circuit chip 1100. The antenna 1105 is providedin a different region from the semiconductor integrated circuit chip1100 except for portions which correspond to power feeding points 1108shown by dashed lines. However, the present invention is not limited tothis structure. As shown in FIG. 12B, the antenna 1105 may be providedso as to at least partly overlap with the semiconductor integratedcircuit chip 1100 except for the portions which correspond to the powerfeeding points 1108. Note that by providing the antenna 1105 in a regionwhich is different from a region where semiconductor integrated circuitchip 1100 is provided, parasitic capacitance generated between theantenna 1105 and the semiconductor integrated circuit chip 1100 can bereduced.

In FIGS. 11A to 11C, the antenna 1105 can transmit and receive a signalor supply electric power from/to the conductive layer 1111 serving as anantenna included in the semiconductor integrated circuit chip 1100mainly at the power feeding point 1107 surrounded by a dashed linethrough electromagnetic induction. Further, the antenna 1105 cantransmit and receive a signal or supply electric power from/to aninterrogator through radio waves mainly in a region except for the powerfeeding point 1107 shown by the dashed line. The frequency of the radiowave used as a carrier (carrier wave) between the interrogator and thesemiconductor device is preferably more than or equal to 30 MHz and lessthan or equal to 5 GHz in this case. For example, a frequency band of950 MHz, 2.45 GHz, or the like may be used.

In addition, although the power feeding point 1107 shown by the dashedline has a rectangular loop shape with a winding number of 1, the shapeof the antenna 1105 is not limited to this structure in the presentinvention. The shape of a looped portion is not limited to rectangle andmay have a curved shape such as a circular shape. Further, the number ofwinding is not limited to 1 and may be plural.

The semiconductor device which is one embodiment of the presentinvention can employ an electromagnetic induction method, anelectromagnetic coupling method, or a microwave method. In the case of amicrowave method, the shape of the antenna 1105 may be decided asappropriate in accordance with on the wavelength of an electromagneticwave.

For example, in the case of employing a microwave method (e.g., a UHFband (860 to 960 MHz band), a 2.45 GHz band, or the like) as the signaltransmission method in the semiconductor device, the length and shape ofthe antenna may be appropriately set in consideration of a wavelength ofan electromagnetic wave used for signal transmission. For example, theantenna can be formed into a linear shape (e.g., a dipole antenna) or aflat shape (e.g., a patch antenna or an antenna having a ribbon shape).Further, the antenna is not limited to a linear shape, and the antennamay have a curved shape, a serpentine curved shape, or in a shapecombining them in consideration of the wavelength of the electromagneticwave.

In the semiconductor device to which the present invention is applied,the conductive shield provided over the semiconductor integrated circuitand the antenna prevents an electrostatic breakdown (malfunctions of thecircuit or damages of a semiconductor element) of the semiconductorintegrated circuit due to electrostatic discharge. Further, with the useof the pair of insulators which sandwich the semiconductor integratedcircuit, a highly reliable semiconductor device that is reduced inthickness and size and has resistance to an external stress can beprovided. Further, defects of shapes and characteristics due to anexternal stress or electrostatic discharge are prevented in themanufacturing process, so that a semiconductor device can bemanufactured with high yield. Therefore, the present invention iseffective in the case of a small semiconductor device to/from which datacan be input and output without contact as described in this embodiment.Since the semiconductor device of this embodiment has high reliabilityagainst an external force, a condition of an environment in which thesemiconductor device can be used is widened and thus, an applicationrange of the semiconductor device can be widened.

Embodiment 6

In this embodiment, an example of application of the above-describedsemiconductor device capable of inputting and outputting data withoutcontact, which is formed using the present invention, will be described.The semiconductor device which can input and output data without contactis also referred to as an RFID tag, an ID tag, an IC tag, an IC chip, anRF tag, a wireless tag, an electronic tag, or a wireless chip dependingon application modes.

The semiconductor device 1300 shown in FIG. 13A has a function ofexchanging data without contact, and includes a high-frequency circuit1302, a power supply circuit 1303, a reset circuit 1304, a clockgenerating circuit 1305, a data demodulating circuit 1306, a datamodulating circuit 1307, a control circuit 1308 for controlling othercircuits, a memory circuit 1309, and an antenna 1301. The high frequencycircuit 1302 is a circuit which receives a signal from the antenna 1301and outputs a signal received by the data modulation circuit 1307 fromthe antenna 1301. The power supply circuit 1303 is a circuit whichgenerates a power supply potential from the received signal. The resetcircuit 1304 is a circuit which generates a reset signal. The clockgeneration circuit 1305 is a circuit which generates a variety of clocksignals based on the received signal input from the antenna 1301. Thedata demodulation circuit 1306 is a circuit which demodulates thereceived signal and outputs the signal to the control circuit 1308. Thedata modulation circuit 1307 is a circuit which modulates a signalreceived from the control circuit 1308. As the control circuit 1308, acode extraction circuit 1311, a code judgment circuit 1312, a CRCdetermination circuit 1313, an output unit circuit 1314, and the likeare formed, for example. In addition, the code extraction circuit 1311is a circuit which extracts each of plural codes included in the commandthat has been transmitted to the control circuit 1308. The code judgmentcircuit 1312 is a circuit which compares an extracted code and codecorresponding to reference, and determines the content of a command. TheCRC judgment circuit 1313 is a circuit which detects the presence oftransmission error based on a determined code.

Next, an example of operation of the above-described semiconductordevice will be described. First, a radio signal is received by theantenna 1301. The radio signal is transmitted to the power supplycircuit 1303 via the high frequency circuit 1302, and a high powersupply potential (hereinafter referred to as VDD) is generated. The VDDis supplied to each circuit in the semiconductor device 1300. Inaddition, a signal transmitted to the data demodulation circuit 1306through the high frequency circuit 1302 is demodulated (hereinafter thesignal is referred to as a demodulated signal). Moreover, signals whichhas passed through the reset circuit 1304 and the clock generationcircuit 1305 via the high-frequency circuit 1302, and the demodulatedsignal are sent to the control circuit 1308. The signal transmitted tothe control circuit 1308 is analyzed by the code extraction circuit1311, the code determination circuit 1312, the CRC determination circuit1313, and the like. Then, in accordance with the analyzed signal,information of the semiconductor device stored in the storage circuit1309 is output. The output information of the semiconductor device isencoded through the output unit circuit 1314. In addition, the encodedinformation of the semiconductor device 1300 passes through the datamodulation circuit 1307 to be transmitted through a radio signal by theantenna 1301. Note that the low power supply potential (hereinafterreferred to as VSS) is common to the plurality of circuits which formthe semiconductor device 1300; therefore, GND can be used as the VSS.

In this manner, data in the semiconductor device can be read bytransmission of a signal to the semiconductor device 1300 from acommunication device and by reception of a signal which is transmittedfrom the semiconductor device 1300 by the communication device.

In addition, the semiconductor device 1300 may supply a power supplyvoltage to each circuit by an electromagnetic wave without a powersupply (battery) mounted, or by an electromagnetic wave and a powersupply (battery) mounted.

Next, an example of usage of a semiconductor device in which data can beinput and output without contact is described. A side surface of amobile terminal which includes a display portion 1351 is provided with acommunication device 1350. A side surface of an article 1352 is providedwith a semiconductor device 1353 (FIG. 13B). When the communicationdevice 1350 is put close to the semiconductor device 1353 on the article1352, information of the article 1352, such as its raw material, itsplace of production, inspection results for each production step, thehistory of distribution, or a description of the article, is displayedon the display portion 1351. Further, when a product 1362 is conveyed bya conveyer belt, the product 1362 can be inspected by using acommunication device 1360 and a semiconductor device 1361 provided onthe product 1362 (see FIG. 13C). In this manner, information can beeasily obtained, and high functions and high added values are realizedby utilizing a semiconductor device for a system.

Thus, a semiconductor device which is one embodiment of the presentinvention has high reliability and a very wide range of application.

Embodiment 7

According to the present invention, a semiconductor device functioningas a chip having a processor circuit (hereinafter also referred to as aprocessor chip, a wireless chip, a wireless processor, a wirelessmemory, or a wireless tag) can be formed. Note that an applicable rangeof the semiconductor device which is one embodiment of the presentinvention is wide, and the semiconductor device can be applied to anyproduct as long as it clarifies information of an object, such as thehistory thereof, without contact and is useful for production,management, or the like. For example, the semiconductor device of thepresent invention may be incorporated in bills, coins, securities,certificates, bearer bonds, containers for packages, books, recordingmedia, personal belongings, vehicles, foods, garments, healthcare items,livingware, medicals, and electronic apparatuses. Examples of them areexplained with reference to FIGS. 14A to 14G.

The bills and coins are money that circulates in the market, andincludes one that can be used in the same way as money in a specificarea (cash voucher), a commemorative coin, and the like. The securitiesrefer to checks, certificates, promissory notes, and the like, which canbe provided with a chip 1401 having a processor circuit (FIG. 14A). Thecertificates include driver's licenses, certificates of residence, andthe like, and can be provided with a chip 1402 including a processorcircuit (see FIG. 14B). The personal belongings include bags, a pair ofglasses, and the like, and can be provided with a chip 1403 including aprocessor circuit (see FIG. 14C). The bearer bonds refer to stamps, ricecoupons, various merchandise coupons, and the like. The containers forpackages refer to wrapping paper for food containers and the like,plastic bottles, and the like, and can be provided with a chip 1404having a processor circuit (see FIG. 14D). The books refer to hardbacks,paperbacks, and the like, and can be provided with a chip 1405 includinga processor circuit (FIG. 14E). The recording media refer to DVDsoftware, video tapes, and the like and can be provided with a chip 1406including a processor circuit (see FIG. 14F). The vehicles refer towheeled vehicles such as bicycles, ships, and the like, and can beprovided with a chip 1407 having a processor circuit (FIG. 14G). Thefoods indicate foods, beverages, and the like. The garments indicateclothes, shoes, and the like. The healthcare items indicate a medicalapparatus, a health appliance, and the like. The livingwares indicatefurniture, lighting apparatus, and the like. The medicals indicate adrug, an agricultural chemical, and the like. The electronic apparatusesindicate a liquid crystal display device, an EL display device,television sets (a television receiver and a thin television receiver),a cellular phone, and the like.

The semiconductor device can be provided by being attached to thesurface of an article or being embedded in an article. For example, inthe case of a book, the semiconductor device may be embedded in thepaper; and in the case of a package made of an organic resin, thesemiconductor device may be embedded in the organic resin.

As described above, the efficiency of an inspection system, a systemused in a rental shop, or the like can be improved by providing thecontainers for packages, the recording media, the personal belongings,the foods, the garments, the livingwares, the electronic apparatuses, orthe like with the semiconductor device. In addition, by providing thevehicles with the semiconductor device, forgery or theft can beprevented. In addition, when the semiconductor device is implanted intocreatures such as animals, each creature can be identified easily. Forexample, by enveloping or attaching the semiconductor device with asensor in/to a creature such as livestock, its health condition such asa current body temperature as well as its birth year, sex, breed, or thelike can be easily managed.

Note that this embodiment can be implemented in combination with any ofEmbodiments 1 to 6 and Embodiment 8 as appropriate.

Embodiment 8

In this embodiment, an example of mounting a semiconductor device whichis one embodiment of the present invention is described with referenceto FIGS. 15A to 15D.

A semiconductor device which is one embodiment of the present inventioncan be mounted on an article, as described in Embodiment 7. In thisembodiment, an example is described in which a flexible semiconductordevice mounted on a flexible substrate is formed.

An example in which a semiconductor integrated circuit chip is embeddedin a flexible substrate is illustrated in FIGS. 15A to 15C. Any of thesemiconductor devices described in Embodiments 1 to 6 can be used forthe semiconductor integrated circuit chip, and here, semiconductorintegrated circuits which are individually separated in chip forms arereferred to as semiconductor integrated circuit chips. A semiconductorintegrated circuit chip 1500 is described in detail in FIG. 15D.Although the semiconductor integrated circuit chip in FIG. 15D is anexample of using Embodiment 1, this embodiment can be applied to theother embodiments and is not limited to this structure.

As shown in FIG. 15D, insulators 1504 and 1505 sandwich a semiconductorintegrated circuit 1501, an antenna 1502, and a conductive shield 1503and seal their side surfaces. Although not particularly shown, thesemiconductor integrated circuit 1501 and the antenna 1502 areelectrically connected to each other, and an insulator is providedbetween the antenna 1502 and the conductive shield 1503 so as not todirectly contact them to each other. In this embodiment, after theinsulators 1504 and 1505 are attached to each other with a plurality ofsemiconductor integrated circuits 1501, antennas 1502, and conductiveshields 1503, which are arranged in the planar direction, sandwichedtherebetween, the semiconductor integrated circuits, the antennas, andthe conductive shields are separated into the individual semiconductorintegrated circuit chips 1500. There is no particular limitation on aseparation means as long as physical separation is possible, andseparation is performed by laser beam irradiation in this embodiment. Bythe separation, the semiconductor integrated circuit 1501 is sealed withthe insulators 1504 and 1505.

With the use of a conductive shield formed over the antenna 1502, anelectrostatic breakdown (malfunctions of the circuit or damages to asemiconductor element) of the semiconductor integrated circuit due toelectrostatic discharge is prevented. Further, with the use of a pair ofinsulators which sandwiches the semiconductor integrated circuittherebetween, a highly reliable semiconductor device that is reduced inthickness and size and has resistance to an external stress can beprovided. Further, defects of shapes and characteristics due to anexternal stress or electrostatic discharge are prevented in themanufacturing process, so that a semiconductor device can bemanufactured with high yield.

In FIG. 15A, the semiconductor integrated circuit chip 1500 issandwiched between a flexible substrate 1511 and a flexible substrate1512, and the semiconductor integrated circuit chip 1500 is provided ina depressed portion fowled in the flexible substrate 1511.

The depressed portion in which the semiconductor integrated circuit chip1500 is provided may be formed in one flexible substrate or may beformed in both flexible substrates. In FIG. 15B, an example isillustrated in which the semiconductor integrated circuit chip 1500 isprovided in the depressed portions provided in both the flexiblesubstrate 1511 and the flexible substrate 1512.

Further, a flexible substrate may have a three-layer structure and acentral flexible substrate may be provided with an opening in which thesemiconductor integrated circuit chip 1500 is provided. In FIG. 15C, anexample is illustrated in which an opening is formed in a flexiblesubstrate 1513, the semiconductor integrated circuit chip 1500 isprovided in the opening, and the flexible substrate 1513 and thesemiconductor integrated circuit chip 1500 are sandwiched between theflexible substrate 1511 and the flexible substrate 1512.

In FIGS. 15A to 15C, a flexible substrate may be further stacked on theoutside of the flexible substrate 1511 and/or the flexible substrate1512.

For each of the flexible substrates 1511, 1512, and 1513, a woven fabricwhich is woven using bundles of fibers (single yarns) (hereinafter, thebundles of fibers are referred to as yarn bundles) for warp yarns andweft yarns, a nonwoven fabric obtained by stacking yarn bundles ofplural kinds of fibers randomly or in one direction, paper, or the likecan be used. Specifically, the following can be used: a substrate formedfrom polyethylene terephthalate (PET), polyethylene naphthalate (PEN),polyethersulfone (PES), polypropylene, polypropylene sulfide,polycarbonate, polyetherimide, polyphenylene sulfide, polyphenyleneoxide, polysulfone, polyphthalamide, or the like; a substrate formedfrom polypropylene, polyester, vinyl, polyvinyl fluoride, vinylchloride, polyamide, or the like; a film; paper formed from a fibrousmaterial; and the like. A layered film of an adhesive synthetic resinfilm (such as an acrylic synthetic resin or an epoxy synthetic resin),or the like can be used. When a substrate or a film is bonded to asubject to be processed, a bonding layer may be used. A condition can beselected in accordance with the kind of the substrate or the film, andbonding can be performed by thermal treatment or application ofpressure. The bonding layer corresponds to a layer containing anadhesive agent such as a thermosetting resin, an ultraviolet-curableresin, an epoxy resin-based adhesive agent, or a resin additive agent.

As in this embodiment, when a depressed portion or an opening is formedin a flexible substrate on which a semiconductor integrated circuit chipis mounted and the semiconductor integrated circuit chip 1500 isprovided so as to be embedded in the depressed portion or the opening, aprojected portion is not formed due to the provision of thesemiconductor integrated circuit chip 1500; therefore, the surface ofthe flexible substrate is flat, and film thickness can be uniform.Accordingly, even if pressure treatment is performed with a roller orthe like for attachment when a semiconductor integrated circuit chip ismounted on a flexible substrate, pressure can be prevented from beinglocally applied on the semiconductor integrated circuit chip (pressureconcentration). Therefore, damages of the semiconductor integratedcircuit chip can be reduced in a mounting step, whereby the yield of asemiconductor device is improved. In addition, even after asemiconductor integrated circuit chip is mounted, a highly reliablesemiconductor device which has high resistance to external stress can beformed.

In addition, since a surface can be flat and smooth, stacking is easilyperformed, which facilitates storage, transfer using a machine, and thelike. Further, a semiconductor integrated circuit chip is not visuallyidentified from the outside (a projected portion that reflects the shapeof the semiconductor integrated circuit chip is not generated on thesurface); therefore, a semiconductor device with high security can beformed.

Although the example of providing the conductive shield on the top sideof the antenna with the insulator provided therebetween is shown in theaforementioned embodiments, the present invention is not limited tothis. For example, the conductive shield may be provided on a surfacewhich is on the opposite side of the antenna across the semiconductorintegrated circuit with the insulator provided therebetween.

By providing the conductive shield on one of the top or bottom side ofthe semiconductor integrated circuit and the antenna, a breakdown of thesemiconductor integrated circuit due to electrostatic discharge isprevented and, since the semiconductor integrated circuit and theantenna include a side on which the conductive shield is not provided,successful transmission and reception of radio waves is possible withoutattenuation of the radio waves.

Embodiment 9

This embodiment is described with reference to FIG. 16. Since theconductive shield protects the semiconductor integrated circuit fromelectrostatic discharge, a conductive material is preferably used forthe conductive shield. However, since attenuation of electromagneticwaves in the conductive material is significant, a communicationdistance is greatly influenced. In this embodiment, an example of anisland-shaped conductive shield for protecting the semiconductorintegrated circuit from electrostatic discharge and limiting attenuationof electromagnetic waves transmitted and received through the antenna tothe minimum is shown.

FIG. 16 shows a state in which a semiconductor integrated circuit 1600,an antenna 1602, an insulator 1601, and island-shaped conductive shields1603 a to 1603 h are sandwiched between insulators 1604 and 1605, andbetween insulators 1606 and 1607. As each of the insulators 1604 and1605, a structural body in which a fibrous body is impregnated with anorganic resin is used. The insulator 1604 is bonded to the semiconductorintegrated circuit 1600 with the bonding layer 1608 providedtherebetween.

When the conductive shield is provided over the semiconductor integratedcircuit 1600 and the antenna 1602 with the insulator 1601 providedtherebetween, by optimizing deposition pressure, conditions, or the likeof a conductive material for forming the conductive shield, theconductive material can be formed so as to be distributed in islandshapes as shown by the island-shaped conductive shields 1603 a to 1603 hon the insulator 1601. Each of the island-shaped conductive shields 1603a to 1603 h is an island-shaped conductor formed using the conductivematerial and has conductivity. However, the island-shaped conductiveshields 1603 a to 1603 h are not connected to each other.

When the conductive material is formed into island shapes in thismanner, characteristics which are advantageous to protect thesemiconductor integrated circuit 1600 from electrostatic discharge areobtained and the island-shaped conductive shields are not in the form ofa film as a whole, whereby attenuation of radio waves transmitted andreceived through the antenna can be limited to the minimum.

This application is based on Japanese Patent Application serial No.2008-246083 filed with the Japan Patent Office on Sep. 25, 2008, theentire contents of which are hereby incorporated by reference.

EXPLANATION OF REFERENCE

100 Semiconductor integrated circuit; 101 Antenna; 102 Insulator; 103Conductive shield; 104 a Insulator; 104 b Insulator; 105 a Insulator;105 b Insulator; 150 End portion; 201 a Fibrous body; 201 b Fibrousbody; 202 a Organic resin; 202 b Organic resin; 300 Semiconductorintegrated circuit; 301 Antenna; 302 Insulator; 303 Conductive shield;304 a Insulator; 304 b Insulator; 305 a Insulator; 305 b Insulator; 310Substrate; 311 Separation layer; 320 a Fibrous body; 320 b Fibrous body;321 a Organic resin; 321 b Organic resin; 400 Substrate; 401 Separationlayer; 403 a Impurity region; 403 b Impurity region; 404 a Source regionor drain region; 404 b Source region or drain region; 406 Channelformation region; 407 Gate insulating layer; 408 Gate electrode layer;409 a Insulating layer; 409 b Insulating layer; 410 Transistor; 411Transistor; 412 Insulating film; 413 Insulating film; 414 Insulatingfilm; 415 Insulating film; 420 a Wiring layer; 420 b Wiring layer; 423 aImpurity region; 423 b Impurity region; 424 a Source region or drainregion; 424 b Source region or drain region; 426 Channel formationregion; 427 Gate insulating layer; 428 Gate electrode layer; 429 aInsulating layer; 429 b Insulating layer; 430 a Wiring layer; 430 bWiring layer; 440 Antenna; 441 Insulator; 442 a Insulator; 442 bInsulator; 443 a Fibrous body; 443 b Fibrous body; 444 a Organic resin;444 b Organic resin; 450 Semiconductor integrated circuit; 480Conductive shield; 600 Substrate; 601 Separation layer; 602 Insulatingfilm; 603 Semiconductor layer; 604 Semiconductor layer; 605Semiconductor layer; 606 Semiconductor layer; 608 Gate insulating layer;609 Gate insulating layer; 610 Insulating film; 611 Charge accumulationlayer; 612 Gate electrode layer; 613 Gate electrode layer; 614 Gateelectrode layer; 615 Control gate electrode layer; 616 Gate electrodelayer; 617 Gate electrode layer; 618 Gate electrode layer; 619 Controlgate electrode layer; 620 Impurity element; 621 Mask; 622 a P-typeimpurity region; 622 b P-type impurity region; 623 Channel formationregion; 624 Impurity element; 625 Mask; 626 a N-type impurity region;626 b N-type impurity region; 627 a N-type impurity region; 627 b N-typeimpurity region; 628 a N-type impurity region; 628 b N-type impurityregion; 629 Channel formation region; 630 Channel formation region; 631Channel formation region; 650 Semiconductor integrated circuit; 662 aN-type impurity region; 662 b N-type impurity region; 664 a N-typeimpurity region; 664 b N-type impurity region; 667 Insulating film; 668Insulating film; 669 a Wiring layer; 669 b Wiring layer; 670 a Wiringlayer; 670 b Wiring layer; 671 a Wiring layer; 671 b Wiring layer; 672 aWiring layer; 672 b Wiring layer; 673 Thin film transistor; 674 Thinfilm transistor; 675 Memory element; 676 Thin film transistor; 680Conductive layer; 681 Insulator; 682 Conductive shield; 683 Insulator;685 Insulator; 686 Fibrous body; 687 Organic resin; 689 Bonding layer;690 Insulating layer; 801 Insulator; 900 Microprocessor; 901 Arithmeticlogic unit; 902 Arithmetic logic unit controller; 903 Instructiondecoder; 904 Interrupt controller; 905 Timing controller; 906 Register;907 Register controller; 908 Bus interface; 909 Read only memory (ROM);910 Memory interface; 1001 RFCPU; 1002 Analog circuit portion; 1003Digital circuit portion; 1004 Resonance circuit; 1005 Rectifier circuit;1006 Constant voltage circuit; 1007 Reset circuit; 1008 Oscillatorcircuit; 1009 Demodulation circuit; 1010 Modulation circuit; 1011 RFinterface; 1012 Control register; 1013 Clock controller; 1014 CPUInterface; 1015 Central Processing Unit (CPU); 1016 Random access memory(RAM); 1017 Read only memory (ROM); 1018 Antenna; 1019 Capacitorportion; 1020 Power supply control circuit; 1100 Semiconductorintegrated circuit chip; 1104 Insulating layer; 1105 Antenna; 1106Supporting substrate; 1107 Feeding point; 1108 Feeding point; 1110Semiconductor integrated circuit; 1111 Conductive layer; 1112 Conductiveshield; 1113 Insulator; 1114 Insulator; 1300 Semiconductor device; 1301Antenna; 1302 High frequency circuit; 1303 Power supply circuit; 1304Reset circuit; 1305 Clock generation circuit; 1306 Data demodulationcircuit; 1307 Data modulation circuit; 1308 Control circuit; 1309Storage circuit; 1311 Code extraction circuit; 1312 Code judgmentcircuit; 1313 CRC judgment circuit; 1314 Output unit circuit; 1350Communication device; 1351 Display portion; 1352 Article; 1353Semiconductor device; 1360 Communication device; 1361 Semiconductordevice; 1362 Product; 1401 Chip; 1402 Chip; 1403 Chip; 1404 Chip; 1405Chip; 1406 Chip; 1407 Chip; 1500 Semiconductor integrated circuit chip;1501 Semiconductor integrated circuit; 1502 Antenna; 1503 Conductiveshield; 1504 Insulator; 1505 Insulator; 1511 Flexible substrate; 1512Flexible substrate; 1513 Flexible substrate; 1600 Semiconductorintegrated circuit; 1601 Insulator; 1602 Antenna; 1603 a Island-shapedconductive shield; 1603 b Island-shaped conductive shield; 1603 cIsland-shaped conductive shield; 1603 d Island-shaped conductive shield;1603 e Island-shaped conductive shield; 1603 f Island-shaped conductiveshield; 1603 g Island-shaped conductive shield; 1603 h Island-shapedconductive shield; 1604 Insulator; 1605 Insulator; 1606 Insulator; 1607Insulator; 1608 Bonding layer

1. A semiconductor device comprising: a semiconductor integratedcircuit; an antenna electrically connected to the semiconductorintegrated circuit; a conductive film provided so as to overlap with thesemiconductor integrated circuit with a first insulator providedtherebetween; and a second insulator provided so that the semiconductorintegrated circuit, the antenna, and the conductive film are surroundedby the second insulator, wherein the conductive film acts as aconductive shield, and wherein the second insulator includes astructural body in which a fibrous body is impregnated with a resin. 2.The semiconductor device according to claim 1, wherein the conductivefilm includes metal.
 3. The semiconductor device according to claim 2,wherein the metal is a titanium film with a thickness of greater than orequal to 5 nm and less than or equal to 100 nm.
 4. The semiconductordevice according to claim 1, wherein the conductive film includes metaloxide.
 5. The semiconductor device according to claim 4, wherein themetal oxide is an indium tin oxide film with a thickness of greater thanor equal to 5 nm and less than or equal to 100 nm containing siliconoxide.
 6. The semiconductor device according to claim 1, wherein theconductive film includes semiconductor or metal nitride.
 7. Thesemiconductor device according to claim 1, wherein the conductive filmhas a structure in which island-shaped conductors formed using metal,metal oxide, semiconductor, or metal nitride are scattered.
 8. Thesemiconductor device according to claim 1, wherein the thickness of atleast one of the first insulator and the second insulator is greaterthan or equal to 5 μm and less than or equal to 50 μm.
 9. Thesemiconductor device according to claim 1, wherein the second insulatorhas an elasticity of more than or equal to 5 GPa and less than or equalto 15 GPa.
 10. The semiconductor device according to claim 1, whereinthe conductive shield is electrically isolated from the semiconductorintegrated circuit.
 11. A semiconductor device comprising: asemiconductor integrated circuit; an antenna electrically connected tothe semiconductor integrated circuit; a conductive film provided so asto overlap with the semiconductor integrated circuit with a firstinsulator provided therebetween; a second insulator provided so that thesemiconductor integrated circuit, the antenna, and the conductive filmare surrounded by the second insulator; and a third insulator providedso that the second insulator is surrounded by the third insulator,wherein the conductive film acts as a conductive shield.
 12. Thesemiconductor device according to claim 11, wherein the second insulatorincludes a structural body in which a fibrous body is impregnated with aresin.
 13. The semiconductor device according to claim 11, wherein theconductive film includes metal.
 14. The semiconductor device accordingto claim 13, wherein the metal is a titanium film with a thickness ofgreater than or equal to 5 nm and less than or equal to 100 nm.
 15. Thesemiconductor device according to claim 11, wherein the conductive filmincludes metal oxide.
 16. The semiconductor device according to claim15, wherein the metal oxide is an indium tin oxide film with a thicknessof greater than or equal to 5 nm and less than or equal to 100 nmcontaining silicon oxide.
 17. The semiconductor device according toclaim 11, wherein the conductive film includes semiconductor or metalnitride.
 18. The semiconductor device according to claim 11, wherein theconductive film has a structure in which island-shaped conductors formedusing metal, metal oxide, semiconductor, or metal nitride are scattered.19. The semiconductor device according to claim 11, wherein thethickness of at least one of the first insulator and the secondinsulator is greater than or equal to 5 μm and less than or equal to 50μm.
 20. The semiconductor device according to claim 11, wherein thesecond insulator has an elasticity of more than or equal to 5 GPa andless than or equal to 15 GPa.
 21. The semiconductor device according toclaim 11, wherein the conductive shield is electrically isolated fromthe semiconductor integrated circuit.
 22. A semiconductor devicecomprising: a semiconductor integrated circuit; an antenna electricallyconnected to the semiconductor integrated circuit; a conductive filmprovided so as to overlap with the semiconductor integrated circuit witha first insulator provided therebetween; a second insulator provided sothat the semiconductor integrated circuit, the antenna, and theconductive film are surrounded by the second insulator; and a thirdinsulator provided so that the second insulator is surrounded by thethird insulator, wherein the conductive film acts as a conductiveshield, and wherein the second insulator includes a structural body inwhich a fibrous body is impregnated with a resin, and wherein the secondinsulator has a region which is melted and fused together.
 23. Thesemiconductor device according to claim 22, wherein the conductive filmincludes metal.
 24. The semiconductor device according to claim 23,wherein the metal is a titanium film with a thickness of greater than orequal to 5 nm and less than or equal to 100 nm.
 25. The semiconductordevice according to claim 22, wherein the conductive film includes metaloxide.
 26. The semiconductor device according to claim 25, wherein themetal oxide is an indium tin oxide film with a thickness of greater thanor equal to 5 nm and less than or equal to 100 nm containing siliconoxide.
 27. The semiconductor device according to claim 22, wherein theconductive film includes semiconductor or metal nitride.
 28. Thesemiconductor device according to claim 22, wherein the conductive filmhas a structure in which island-shaped conductors formed using metal,metal oxide, semiconductor, or metal nitride are scattered.
 29. Thesemiconductor device according to claim 22, wherein the thickness of atleast one of the first insulator and the second insulator is greaterthan or equal to 5 μm and less than or equal to 50 μm.
 30. Thesemiconductor device according to claim 22, wherein the second insulatorhas an elasticity of more than or equal to 5 GPa and less than or equalto 15 GPa.
 31. The semiconductor device according to claim 22, whereinthe conductive shield is electrically isolated from the semiconductorintegrated circuit.